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OverviewYield and reliability of memories have degraded with device and voltage scaling in the nano-scale era, due to ever-increasing hard/soft errors and device parameter variations. This book systematically describes these yield and reliability issues in terms of mathematics and engineering, as well as an array of repair techniques, based on the authors’ long careers in developing memories and low-voltage CMOS circuits. Nanoscale Memory Repair gives a detailed explanation of the various yield models and calculations, as well as various, practical logic and circuits that are critical for higher yield and reliability. Full Product DetailsAuthor: Masashi Horiguchi , Kiyoo ItohPublisher: Springer-Verlag New York Inc. Imprint: Springer-Verlag New York Inc. Edition: 2011 ed. Volume: v. 1 Dimensions: Width: 15.50cm , Height: 1.40cm , Length: 23.50cm Weight: 1.100kg ISBN: 9781441979575ISBN 10: 1441979573 Pages: 218 Publication Date: 13 January 2011 Audience: Professional and scholarly , Professional & Vocational Format: Hardback Publisher's Status: Active Availability: Out of print, replaced by POD  We will order this item for you from a manufatured on demand supplier. Table of ContentsReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |
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