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OverviewYield and reliability of memories have degraded with device and voltage scaling in the nano-scale era, due to ever-increasing hard/soft errors and device parameter variations. This book systematically describes these yield and reliability issues in terms of mathematics and engineering, as well as an array of repair techniques, based on the authors long careers in developing memories and low-voltage CMOS circuits. Nanoscale Memory Repair gives a detailed explanation of the various yield models and calculations, as well as various, practical logic and circuits that are critical for higher yield and reliability. Full Product DetailsAuthor: Masashi Horiguchi , Kiyoo ItohPublisher: Springer Imprint: Springer Dimensions: Width: 23.40cm , Height: 1.20cm , Length: 15.60cm Weight: 0.327kg ISBN: 9781441979599ISBN 10: 144197959 Pages: 228 Publication Date: 30 March 2011 Audience: General/trade , General Format: Undefined Publisher's Status: Unknown Availability: In stock  Limited stock is available. It will be ordered for you and shipped pending supplier's limited stock. Table of ContentsReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |
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