Overview

Integrated circuits, and devices fabricated using the techniques developed for integrated circuits, have steadily gotten smaller, more complex, and more powerful. The rate of shrinking is astonishing - some components are now just a few dozen atoms wide. This book attempts to answer the questions, What comes next? and How do we get there? Nanolithography outlines the present state of the art in lithographic techniques, including optical projection in both deep and extreme ultraviolet, electron and ion beams, and imprinting. Special attention is paid to related issues, such as the resists used in lithography, the masks (or lack thereof), the metrology needed for nano-features, modeling, and the limitations caused by feature edge roughness. In addition emerging technologies are described, including the directed assembly of wafer features, nanostructures and devices, nano-photonics, and nano-fluidics. This book is intended as a guide to the researcher new to this field, reading related journals or facing the complexities of a technical conference. Its goal is to give enough background information to enable such a researcher to understand, and appreciate, new developments in nanolithography, and to go on to make advances of his/her own.

Full Product Details

Author:   M Feldman
Publisher:   Elsevier Science & Technology
Imprint:   Woodhead Publishing Ltd
Dimensions:   Width: 15.60cm , Height: 3.10cm , Length: 23.40cm
Weight:   0.826kg
ISBN:  

9780081014042

ISBN 10:   008101404
Pages:   592
Publication Date:   30 October 2017
Audience:   College/higher education ,  Postgraduate, Research & Scholarly
Format:   Paperback
Publisher's Status:   Active
Availability:   In stock  
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Table of Contents

Contributor contact details Woodhead Publishing Series in Electronic and Optical Materials Preface 1: Optical projection lithography Abstract 1.1 Introduction 1.2 Lithography technology and trends 1.3 Fundamentals of optical lithography 1.4 Image evaluation 1.5 Projection lithography systems 1.6 Wavelengths for optical lithography 1.7 Lithography in the deep ultraviolet (UV) 1.8 Resolution enhancement technology 1.9 Immersion lithography 1.10 Multiple patterning optical lithography 1.11 Conclusion 2: Extreme ultraviolet (EUV) lithography Abstract 2.1 Introduction 2.2 EUV sources 2.3 EUV optics 2.4 EUV masks 2.5 EUV resists 2.6 EUV integration and implementation challenges 2.7 Conclusion and future trends 2.8 Acknowledgments 3: Electron beam lithography Abstract 3.1 Introduction 3.2 Using pixel parallelism to address the throughput bottleneck 3.3 The tradeoff between resolution and throughput 3.4 Distributed systems 3.5 Ultimate lithographic resolution 3.6 Electron-beam patterning of photomasks for optical lithography 3.7 Conclusion 3.8 Acknowledgements 4: Focused ion beams for nano-machining and imaging Abstract 4.1 Introduction 4.2 An adumbrated history of focused ion beams (FIBs) 4.3 Sources of ions: a quartet of types 4.4 Charged particle optics 4.5 Ion-matter interactions 4.6 Milling 4.7 Deposition 4.8 Imaging 4.9 Spectroscopy 4.10 Conclusion and future trends 5: Masks for micro- and nanolithography Abstract 5.1 Introduction 5.2 Mask materials 5.3 Mask process 5.4 Mask metrology 5.5 Defects and masks 5.6 Conclusion 6: Maskless photolithography Abstract 6.1 Introduction 6.2 The use of photons as opposed to charged particles 6.3 Forms of maskless photolithography 6.4 Zone-plate-array lithography (ZPAL) 6.5 Proximity-effect correction 6.6 Extending the resolution of ZPAL 6.7 Commercialization of ZPAL by LumArray, Inc. 6.8 Conclusion 7: Chemistry and processing of resists for nanolithography Abstract 7.1 Introduction 7.2 Resists for optical lithography: synthesis and radiation induced chemistry of resists as a function of exposure technology 7.3 Chemically amplified resist process considerations 7.4 Chemically amplified resists for 193 nm lithography 7.5 Resists for extreme ultraviolet lithography (EUVL) 7.6 Resists for electron beam lithography 7.7 Resists for selected forward looking lithographic technologies 7.8 Resist resolution limitations 7.9 Conclusion 8: Directed assembly nanolithography Abstract 8.1 Introduction 8.2 Block copolymers in lithography 8.3 Directed self-assembly of block copolymers 8.4 Programmable three-dimensional lithography 8.5 Conclusion 9: Nanoimprint lithography Abstract 9.1 Introduction 9.2 An overview of imprint lithography 9.3 Soft lithography 9.4 Thermal imprint lithography 9.5 Alternative thermal imprint processes 9.6 Ultraviolet (UV) nanoimprint lithography overview 9.7 Jet and flash imprint lithography 9.8 Roll to roll imprint lithography 9.9 Defectivity 9.10 Conclusions 9.11 Acknowledgments 10: Nanostructures: fabrication and applications Abstract 10.1 Introduction 10.2 Characterization of nanostructures 10.3 Methods to create nanostructures: top-down fabrication of nanostructures 10.4 Methods to create nanostructures: bottom-up fabrication of nanostructures 10.5 Properties of nanostructures 10.6 Applications of nanostructures 11: Nanophotonics: devices for manipulating light at the nanoscale Abstract 11.1 Introduction 11.2 Photonic crystals 11.3 Ring resonators 11.4 Extraordinary optical transmission through subwavelength apertures 11.5 Optical nanoantennas 11.6 Plasmonic focusing 11.7 Near-field optical microscopy 11.8 Plasmonic waveguides 11.9 Enhancement of nonlinear processes 11.10 Application in photovoltaics 11.11 Conclusion 12: Nanodevices: fabrication, prospects for low dimensional devices and applications Abstract 12.1 Introduction 12.2 Motivation for nanodevices 12.3 Nanofabrication: creating the building blocks for devices 12.4 Prospects for low dimensional devices 12.5 Beyond the bottom-up: hybrid nanoelectronics 12.6 Conclusion and future trends 13: Microfluidics: technologies and applications Abstract 13.1 Introduction 13.2 Current trends in microfluidics 13.3 Present state of technology 13.4 Applications 13.5 Future trends 13.6 Conclusion 13.7 Sources of further information and advice 14: Modeling of nanolithography processes Abstract 14.1 Introduction 14.2 Optical lithography modeling 14.3 The optical system in optical lithography modeling 14.4 Photoresist model 14.5 Model critical dimension (CD) extraction 14.6 Difficulties in modeling 14.7 Extreme ultraviolet (EUV)/electron beam lithography modeling 14.8 Conclusion 15: Mask-substrate alignment via interferometric moire fringes Abstract 15.1 Introduction 15.2 Background to alignment methods 15.3 Fundamentals of interferometric-spatial-phase imaging (ISPI) 15.4 Implementation of moire 15.5 Characteristics of moire fringe formation 15.6 Performance of ISPI 15.7 Backside ISPI 15.8 Conclusion and future trends 16: Sidewall roughness in nanolithography: origins, metrology and device effects Abstract 16.1 Introduction 16.2 Metrology and characterization 16.3 Process and material effects: modeling and simulation 16.4 Process and material effects: experimental results 16.5 Impact on device performance 16.6 Conclusions 17: New applications and emerging technologies in nanolithography Abstract 17.1 Introduction 17.2 Applications of high-resolution patterning to new device structures: advances in tunneling structures 17.3 Geometry control of the tunnel junctions 17.4 The quantum dot placement problem 17.5 Conclusion 17.6 Acknowledgments Index

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Martin Feldman is a Professor of Electrical and Computer Engineering at Louisiana State University, USA.

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