Overview

Nanoelectronic Device Applications Handbook gives a comprehensive snapshot of the state of the art in nanodevices for nanoelectronics applications. Combining breadth and depth, the book includes 68 chapters on topics that range from nano-scaled complementary metal-oxide-semiconductor (CMOS) devices through recent developments in nano capacitors and AlGaAs/GaAs devices. The contributors are world-renowned experts from academia and industry from around the globe. The handbook explores current research into potentially disruptive technologies for a post-CMOS world. These include: * Nanoscale advances in current MOSFET/CMOS technology * Nano capacitors for applications such as electronics packaging and humidity sensors * Single electron transistors and other electron tunneling devices * Quantum cellular automata and nanomagnetic logic * Memristors as switching devices and for memory * Graphene preparation, properties, and devices * Carbon nanotubes (CNTs), both single CNT and random network * Other CNT applications such as terahertz, sensors, interconnects, and capacitors * Nano system architectures for reliability * Nanowire device fabrication and applications * Nanowire transistors * Nanodevices for spintronics The book closes with a call for a new generation of simulation tools to handle nanoscale mechanisms in realistic nanodevice geometries. This timely handbook offers a wealth of insights into the application of nanoelectronics. It is an invaluable reference and source of ideas for anyone working in the rapidly expanding field of nanoelectronics.

Full Product Details

Author:   James E. Morris ,  Krzysztof Iniewski
Publisher:   Taylor & Francis Inc
Imprint:   CRC Press Inc
ISBN:  

9781466565241

ISBN 10:   1466565241
Pages:   940
Publication Date:   06 June 2013
Audience:   College/higher education ,  Postgraduate, Research & Scholarly
Format:   Electronic book text
Publisher's Status:   Active
Availability:   In stock  
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Table of Contents

Section I Nano-CMOS Modeling Validation of Nano-CMOS Predictive Technology Model Tool on NanoHUB.org Alejandro Rodriguez and Hasina F. Huq Comparative Analysis of Mobility and Dopant Number Fluctuation Models for the Threshold Voltage Fluctuation Estimation in 45 nm Channel Length MOSFET Device Nabil Ashraf, Dragica Vasileska, Gilson Wirth, and Purushothaman Srinivasan Impact of Random Interface Traps on Asymmetric Characteristic Fluctuation of 16-nm-Gate MOSFET Devices Yiming Li Section II Nano-CMOS Technology Bottom-Up Approaches for CMOS Scaling in the Nanoscale Era Mrunal A. Khaderbad and V. Ramgopal Rao Study of Lanthanum Incorporated HfO2 Nanoscale Film Deposited as an MOS Device Structure Using a Dense Plasma Focus Device A. Srivastava and Y. Malhotra Low-Power Reliable Nano Adders Azam Beg, Mawahib Hussein Sulieman, Valeriu Beiu, and Walid Ibrahim Section III Nano Capacitors Package-Compatible High-Density Nano-Scale Capacitors with Conformal Nano-Dielectrics Himani Sharma, P. Markondeya Raj, Parthasarathi Chakraborti, Yushu Wang, and Rao Tummala Modified Carbon Nanostructures for Display and Energy Storage Sivaram Arepalli Production and Characterization of Nanoparticle Dispersions of Organic Semiconductors for Potential Applications in Organic Electronics Muhammad Hassan Sayyad, Fazal Wahab, Munawar Ali Munawar, Muhammad Shahid, Jamil Anwar Chaudry, Khaulah Sulaiman, Zubair Ahmad, and Abdullah Mohamed Asiri Investigation of Charge Accumulation in Si3N4/SiO2 Dielectric Stacks for Electrostatically Actuated NEMS/MEMS Reliability Gang Li, Ulrik Hanke, and Xuyuan Chen Section IV Terahertz Systems and Devices Nano Antennas for Energy Conversion Mario Bareiss, Andreas Hochmeister, Gunther Jegert, Gregor Koblmuller, Ute Zschieschang, Hagen Klauk, Bernhard Fabel, Giuseppe Scarpa, Wolfgang Porod, and Paolo Lugli Ballistic Transistor Logic for Circuit Applications David Wolpert and Paul Ampadu Section V Single Electron Transistors and Electron Tunneling Devices Simultaneously Controlled Tuning of Tunneling Properties of Integrated Nanogaps Using Field-Emission-Induced Electromigration Mitsuki Ito, Shunsuke Akimoto, Ryutaro Suda, and Jun-Ichi Shirakashi High-Resistive Tunnel Junctions for Room-Temperature-Operating Single-Electron Transistors Fabricated Using Chemical Oxidation of Tungsten Nanoparticles P. Santosh Kumar Karre, Daw Don Cheam, Manoranjan Acharya, and Paul L. Bergstrom Axon-Inspired Communication Systems Valeriu Beiu, Liren Zhang, Azam Beg, Walid Ibrahim, and Mihai Tache Electromechanical Modeling of GNP Nanocomposites for Integrated Stress Monitoring of Electronic Devices Alessandro Giuseppe D'Aloia, Alessio Tamburrano, Giovanni De Bellis, Jacopo Tirillo, Fabrizio Sarasini, and Maria Sabrina Sarto Section VI Quantum Cellular Automata An HDL Model of Magnetic Quantum-Dot Cellular Automata Devices and Circuits Marco Ottavi, Salvatore Pontarelli, Adelio Salsano, and Fabrizio Lombardi Restoring Divider Design for Quantum-Dot Cellular Automata Seong-Wan Kim and Earl E. Swartzlander, Jr. LINA-QCA: Theory, Design, and Viable Implementation Strategies Loyd R. Hook IV and Samuel C. Lee Minimal Majority Gate Mapping of Four-Variable Functions for Quantum-Dot Cellular Automata Peng Wang, Mohammed Niamat, and Srinivasa Vemuru Section VII Memristors, Resistive Switches, and Memory Nanodevices: Describing Function and Lienard Equation Alberto Delgado Sensing and Writing Operations of Nano-Crossbar Memory Arrays An Chen Modeling of Complementary Resistive Switches E. Linn, S. Menzel, R. Rosezin, U. Bottger, R. Bruchhaus, and R. Waser Hybrid Design of a Memory Cell Using a Memristor and Ambipolar Transistors Pilin Junsangsri and Fabrizio Lombardi Spike Timing-Dependent Plasticity Using Memristors and Nano-Crystalline Silicon TFT Memories Kurtis D. Cantley, Anand Subramaniam, and Eric M. Vogel Thermally Actuated Nanoelectromechanical Memory: A New Memory Concept for Spacecraft Application Elham Maghsoudi and Michael James Martin Section VIII Graphene Preparation and Properties Low-Stress Transfer of Graphene and Its Tunable Resistance by Remote Plasma Treatments in Hydrogen Waileong Chen, Chia-Hao Tu, Keng-Chih Liang, Chih-Yi Liu, Chuan-Pu Liu, and Yonhua Tzeng High-Yield Dielectrophoretic Deposition and Ion Sensitivity of Graphene Pengfei Li, Nan Lei, Jie Xu, and Wei Xue Multilayer Graphene Grid and Nanowire Fabrication and Printing Masudur Rahman and Michael L. Norton Section IX Graphene Devices Nanotransistors Using Graphene Interfaced with Advanced Dielectrics for High-Speed Communication Osama M. Nayfeh, Ki Kang Kim, and Jing Kong Graphene-on-Diamond Devices and Interconnects: Carbon sp2-on-sp3 Technology Jie Yu, Guanxiong Liu, Alexander A. Balandin, and Anirudha V. Sumant Graphene Band Gap Modification via Functionalization with Metal-Bis-Arene Molecules Paul Plachinda, David R. Evans, and Raj Solanki Section X Carbon Nanotube Applications Integrating Low-Temperature Carbon Nanotubes as Vertical Interconnects in Si Technology Sten Vollebregt, Ryoichi Ishihara, Jaber Derakhshandeh, Johan van der Cingel, Hugo Schellevis, and C.I.M. Beenakker Readout Circuit Design for MWCNT Infrared Sensors Liangliang Chen, Ning Xi, Hongzhi Chen, and King Wai Chiu Lai Use of Vertically Aligned Carbon Nanotubes for Electrochemical Double-Layer Capacitors Adrianus I. Aria, Melanie Guittet, and Morteza Gharib Spray Deposition of Carbon Nanotube Thin Films Alaa Abdellah, Paolo Lugli, and Giuseppe Scarpa Electrical Control of Synthesis Conditions for Locally Grown CNTs on a Polysilicon Microstructure Knut E. Aasmundtveit, Bao Quoc Ta, Nils Hoivik, and Einar Halvorsen Section XI Carbon Nanotube Transistor Modeling A Qualitative Comparison of Energy Band Gap Equations with a Focus on Temperature and Its Effect on CNTFETs Jesus Torres and Hasina F. Huq Real-Time Quantum Simulation of Terahertz Response in Single-Walled Carbon Nanotube Zuojing Chen, Eric Polizzi, and Sigfrid Yngvesson Section XII Carbon Nanotube Transistor Fabrication Fabrication of Stable n-Type Thin-Film Transistor with Cs Encapsulated Single-Walled Carbon Nanotubes Toshiaki Kato, Rikizo Hatakeyama, and Yosuke Osanai Printing Technology and Advantage of Purified Semiconducting Carbon Nanotubes for Thin Film Transistors Hideaki Numata, Kazuki Ihara, Takeshi Saito, and Fumiyuki Nihey Section XIII Random CNT Network Transistors Solution-Processed Random Carbon Nanotube Networks Used in a Thin-Film Transistor Qingqing Gong, Edgar Albert, Bernhard Fabel, Alaa Abdellah, Paolo Lugli, Giuseppe Scarpa, and Mary B. Chan-Park Analysis of Yield Improvement Techniques for CNFET-Based Logic Gates Rehman Ashraf, Malgorzata Chrzanowska-Jeske, and Siva G. Narendra Low-Power and Metallic-CNT-Tolerant CNTFET SRAM Design Zhe Zhang and Jose G. Delgado-Frias Section XIV Nano-Redundant Systems Optimized Built-In Self-Test Technique for CAEN-Based Nanofabric Systems Maciej Zawodniok and Sambhav Kundaikar Adaptive Fault-Tolerant Architecture for Unreliable Device Technologies Nivard Aymerich, Sorin Cotofana, and Antonio Rubio Section XV Nanowire Fabrication Growth and Characterization of GaAs Nanowires Grown on Si Substrates Jung-Hyun Kang, Qiang Gao, Hark Hoe Tan, Hannah J. Joyce, Yong Kim, Yanan Guo, Hongyi Xu, Jin Zou, Melodie A. Fickenscher, Leigh M. Smith, Howard E. Jackson, Jan M. Yarrison-Rice, and Chennupati Jagadish Synthesis and Characterization of n- and p-Doped Tin Oxide Nanowires for Gas Sensing Applications Hoang A. Tran and Shankar B. Rananavare Cu Silicide Nanowires: Fabrication, Characterization, and Application to Li-Ion Batteries Poh Keong Ng, Reza Shahbazian-Yassar, and Carmen Maria Lilley High-Aspect-Ratio Metallic Nanowires by Pulsed Electrodeposition Matthias Graf, Alexander Eychmuller, and Klaus-Jurgen Wolter Section XVI Nanowire Applications Zinc Oxide Nanowires for Biosensing Applications Anurag Gupta, Bruce C. Kim, Dawen Li, Eugene Edwards, Christina Brantley, and Paul Ruffin Aqueous Synthesis of n-/p-type ZnO Nanorods on Porous Silicon for the Application of p-n Junction Device Eunkyung Park, Jungwoo Lee, Taehee Park, Jongtaek Lee, Donghwan Lee, and Whikun Yi High Surface-Enhanced Raman Scattering (SERS) as an Analytical Tool Using Silver Nanoparticles on GaN Nanowires Nitzan Dar, Wen-Jing Wang, Kuo-Hao Lee, Yung-Tang Nien, and In-Gann Chen Section XVII Nanowire Transistors High-Speed and Transparent Nanocrystalline ZnO Thin Film Transistors Burhan Bayraktaroglu and Kevin Leedy First-Principle Study of Energy-Band Control by Cross-Sectional Morphology in [110]-Si Nanowires Shinya Kyogoku, Jun-Ichi Iwata, and Atsushi Oshiyama Interplay of Self-Heating and Short-Range Coulomb Interactions Due to Traps in a 10 nm Channel Length Nanowire Transistor Arif Hossain, Dragica Vasileska, Katerina Raleva, and Stephen M. Goodnick Impact of Phonon Scattering in an Si GAA Nanowire FET with a Single Donor in the Channel Antonio Martinez, Manuel Aldegunde, and Karol Kalna Modeling and Minimizing Variations of Gate-All-Around Multiple-Channel Nanowire TFTs Po-Chun Huang, Lu-An Chen, C.C. Chen, and Jeng-Tzong Sheu Characterization of Gate-All-Around Si-Nanowire Field-Effect Transistor: Extraction of Series Resistance and Capacitance-Voltage Behavior Yoon-Ha Jeong, Sang-Hyun Lee, Ye-Ram Kim, Rock-Hyun Baek, Dong-Won Kim, Jeong-Soo Lee, and Dae Mann Kim Section XVIII Nanomagnetic Logic Nonvolatile Logic-in-Memory Architecture: An Integration between Nanomagnetic Logic and Magnetoresistive RAM Jayita Das, Syed M. Alam, and Sanjukta Bhanja Implementation of a Nanomagnet Full Adder Circuit Edit Varga, Gyorgy Csaba, G. H. Bernstein, and Wolfgang Porod Investigations on Nanomagnetic Logic by Experiment-Based Compact Modeling Stephan Breitkreutz, Josef Kiermaier, Irina Eichwald, Xueming Ju, Gyorgy Csaba, Doris Schmitt-Landsiedel, and Markus Becherer Parallel Energy Minimizing Computation via Dipolar Coupled Single Domain Nanomagnets Javier Pulecio, Sanjukta Bhanja, and Sudeep Sarkar Section XIX Spintronics On Physical Limits and Challenges of Graphene Nanoribbons as Interconnects for All-Spin Logic Shaloo Rakheja and Azad Naeemi Influence of Impurity and Dangling Bond Scattering on the Conductance Anomalies of Side-Gated Quantum Point Contacts J. Wan, J. Charles, M. Cahay, P.P. Das, N. Bhandari, and R.S. Newrock Electric Field-Controlled Spin Interactions in Quantum Dot Molecules Kushal C. Wijesundara and Eric A. Stinaff Material Issues for Efficient Spin-Transfer Torque RAMs Kamaram Munira, William A. Soffa, and Avik W. Ghosh Section XX Nanodevice Modeling Atomic-Scale Modeling of Nanoscale Devices Anders Blom and Kurt Stokbro Index

Reviews

... an outstanding, edited collection of state-of-the-art contributions. ... The material provides an excellent overview of the broadly defined field of nanoelectronic devices. ... a comprehensive handbook that is a great resource for students and researchers. Its well-balanced and clear presentations will attract both engineers and scientists of diverse backgrounds. Igor Zutic, University at Buffalo, State University of New York, USA, from ASME's Journal of Nanotechnology in Engineering and Medicine, August 2013, Vol. 4 The book covers an extremely large number of topics in nanodevices and their applications. For a person with an engineering background, it will be very useful if he or she wants to start to go in deep and understand the current state of the art of research and technology development in this field. ... I highly recommend it. Johan Liu, Professor and Head, Bionano Systems Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden Nanotechnology has become the foundation for semiconductor logic and memory devices and systems as more and more functionality is desired in smaller and smaller dimensions. This book eloquently describes the fundamental building blocks of future electronic and magnetic devices, providing details on their principles and fabrication and subsequent integration. It is a great resource for researchers and educators in the field of emerging nanoelectronic devices. Santosh K. Kurinec, Rochester Institute of Technology, New York, USA This volume is a unique assembly of topics ranging from present-day nanodevices used commercially today, new nanomaterials such as semiconductor nanowires to carbon-based electronics, and to potential future technologies based on entirely new concepts of information processing such as single electron devices, phase change devices, nanomagnetics, spintronics, and quantum computing. The reader should find a wealth of current topics in nanoelectronics within this handbook, which will serve as an invaluable reference on this ubiquitous technology. From the Foreword by Stephen M. Goodnick, IEEE Nanotechnology Council President (2012-2013)

... an outstanding, edited collection of state-of-the-art contributions. ... The material provides an excellent overview of the broadly defined field of nanoelectronic devices. ... a comprehensive handbook that is a great resource for students and researchers. Its well-balanced and clear presentations will attract both engineers and scientists of diverse backgrounds. -Igor Zutic, University at Buffalo, State University of New York, USA, from ASME's Journal of Nanotechnology in Engineering and Medicine, August 2013, Vol. 4 The book covers an extremely large number of topics in nanodevices and their applications. For a person with an engineering background, it will be very useful if he or she wants to start to go in deep and understand the current state of the art of research and technology development in this field. ... I highly recommend it. -Johan Liu, Professor and Head, Bionano Systems Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden Nanotechnology has become the foundation for semiconductor logic and memory devices and systems as more and more functionality is desired in smaller and smaller dimensions. This book eloquently describes the fundamental building blocks of future electronic and magnetic devices, providing details on their principles and fabrication and subsequent integration. It is a great resource for researchers and educators in the field of emerging nanoelectronic devices. -Santosh K. Kurinec, Rochester Institute of Technology, New York, USA This volume is a unique assembly of topics ranging from present-day nanodevices used commercially today, new nanomaterials such as semiconductor nanowires to carbon-based electronics, and to potential future technologies based on entirely new concepts of information processing such as single electron devices, phase change devices, nanomagnetics, spintronics, and quantum computing. The reader should find a wealth of current topics in nanoelectronics within this handbook, which will serve as an invaluable reference on this ubiquitous technology. -From the Foreword by Stephen M. Goodnick, IEEE Nanotechnology Council President (2012-2013)

Author Information

James (Jim) E. Morris is an electrical and computer engineering professor at Portland State University, Oregon, and professor emeritus at SUNY-Binghamton, having served as department chair at both. Dr. Morris has served the IEEE Components Packaging and Manufacturing Technology (CPMT) Society as a treasurer (1991-1997), BoG member (1996-1998, 2011-2013), VP for conferences (1998-2003), distinguished lecturer (2000-present), CPMT Transactions associate editor (1998-present), and co-chair of the CPMT Technical Committee on nanotechnology, and was recognized with the 2005 CPMT David Feldman Outstanding Contribution Award. He serves on the IEEE Nanotechnology Council (NTC) as CPMT representative (2007-present), VP for conferences (2013-2014), and past Awards chair. He has edited or co-authored five books on electronics packaging, including one on nanopackaging. Krzysztof (Kris) Iniewski manages R&D at Redlen Technologies, Inc., a startup company in Vancouver, Canada. He is also the president of CMOS Emerging Technologies Research Inc., an organization of high-tech events covering communications, microsystems, optoelectronics, and sensors. Dr. Iniewski has held numerous faculty and management positions at the University of Toronto, University of Alberta, Simon Fraser University, and PMC-Sierra, Inc. He has published more than 100 research papers in international journals and conferences. He holds 18 international patents granted in the United States, Canada, France, Germany, and Japan. He is a frequent invited speaker, has consulted for multiple organizations internationally, and has written and edited several books.

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