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OverviewThis 62-page handbook uses insight to explain how metal-oxide-semiconductor (MOS) field-effect transistors (FETs) block and conduct current in sub-threshold, weak inversion, and inversion. It describes how MOSFETs accumulate, deplete, and invert their channels and how they saturate their currents in sub-threshold and inversion. It also discusses body effect, how gate-channel oxide capacitance distributes across operating regions, and short-channel effects, like drain-induced barrier lowering (DIBL), surface scattering, hot-electron injection, oxide-surface ejections, velocity saturation, and impact ionization and avalanche. Discussions extend to varactors, MOS diodes, lightly doped drains (LDD), diffused-channel MOSFETs (DMOS), junction isolation, substrate MOSFETs, welled MOSFETs, and electronic and systemic noise coupling and injection. Illustrative figures, equations, and examples complement discussions throughout. Full Product DetailsAuthor: Gabriel Alfonso Rincon-MoraPublisher: Independently Published Imprint: Independently Published Dimensions: Width: 15.20cm , Height: 0.50cm , Length: 22.90cm Weight: 0.122kg ISBN: 9781077888210ISBN 10: 107788821 Pages: 76 Publication Date: 03 July 2019 Audience: General/trade , General Format: Paperback Publisher's Status: Active Availability: In stock  We have confirmation that this item is in stock with the supplier. It will be ordered in for you and dispatched immediately. Table of ContentsReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |
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