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OverviewA reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs. Full Product DetailsAuthor: Narain Arora (Cadence Design Systems, Usa)Publisher: World Scientific Publishing Co Pte Ltd Imprint: World Scientific Publishing Co Pte Ltd Volume: 0 Dimensions: Width: 16.20cm , Height: 3.20cm , Length: 22.90cm Weight: 1.125kg ISBN: 9789812568625ISBN 10: 981256862 Pages: 632 Publication Date: 21 February 2007 Audience: College/higher education , Undergraduate Format: Hardback Publisher's Status: Active Availability: Awaiting stock The supplier is currently out of stock of this item. It will be ordered for you and placed on backorder. Once it does come back in stock, we will ship it out for you. Table of ContentsReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |