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OverviewCircuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters. It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model. MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction. This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. Itis helpful to experts and students alike. Full Product DetailsAuthor: Yuhua Cheng , Chenming HuPublisher: Springer-Verlag New York Inc. Imprint: Springer-Verlag New York Inc. Edition: Softcover reprint of the original 1st ed. 1999 Dimensions: Width: 15.50cm , Height: 2.50cm , Length: 23.50cm Weight: 0.730kg ISBN: 9781475784428ISBN 10: 1475784422 Pages: 462 Publication Date: 28 March 2013 Audience: Professional and scholarly , Professional & Vocational Format: Paperback Publisher's Status: Active Availability: Manufactured on demand  We will order this item for you from a manufactured on demand supplier. Table of ContentsSignificant Physical Effects In Modern MOSFETs.- Threshold Voltage Model.- I–V Model.- Capacitance Model.- Substrate Current Model.- Noise Model.- Source/Drain Parasitics Model.- Temperature Dependence Model.- Non-quasi Static (NQS) Model.- BSIM3v3 Model Implementation.- Model Testing.- Model Parameter Extraction.- RF and Other Compact Model Applications.ReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |
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