Overview

Molecular Beam Epitaxy describes a technique in wide-spread use for the production of high-quality semiconductor devices. It discusses the most important aspects of the MBE apparatus, the physics and chemistry of the crystallization of various materials and device structures, and the characterization methods that relate the structural parameters of the grown (or growing) film or structure to the technologically relevant procedure. In this second edition two new fields have been added: crystallization of as-grown low-dimensional heterostructures, mainly quantum wires and quantum dots, and in-growth control of the MBE crystallization process of strained-layer structures. Out-of-date material has been removed.

Full Product Details

Author:   Marian A. Herman ,  Helmut Sitter
Publisher:   Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
Imprint:   Springer-Verlag Berlin and Heidelberg GmbH & Co. K
Edition:   2nd ed. 1996. Softcover reprint of the original 2nd ed. 1996
Volume:   7
Dimensions:   Width: 15.50cm , Height: 2.40cm , Length: 23.50cm
Weight:   0.724kg
ISBN:  

9783642800627

ISBN 10:   3642800629
Pages:   453
Publication Date:   03 October 2013
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   Manufactured on demand  
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Table of Contents

Background Information.- 1. Introduction.- Technological Equipment.- 2. Sources of Atomic and Molecular Beams.- 3. High-Vacuum Growth and Processing Systems.- Characterization Methods.- 4. Characterization Techniques.- MBE Growth Process.- 5. MBE Growth Processes of Lattice-Matched Structures.- 6. Growth Processes in Strained-Layer MBE.- 7. Material-Related Growth Characteristics in MBE.- Conclusion.- 8. Outlook.- References.

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