Overview

Molecular Beam Epitaxy

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Author:   Mohamed Henini (The University of Nottingham, School of Physics and Astronomy, UK)
Publisher:   Elsevier Science Publishing Co Inc
Imprint:   Elsevier Science Publishing Co Inc
Dimensions:   Width: 21.60cm , Height: 3.30cm , Length: 27.60cm
Weight:   1.920kg
ISBN:  

9780123878397

ISBN 10:   012387839
Pages:   744
Publication Date:   31 December 2012
Audience:   Professional and scholarly ,  Professional & Vocational
Replaced By:   9780128121368
Format:   Hardback
Publisher's Status:   Active
Availability:   Manufactured on demand  
We will order this item for you from a manufactured on demand supplier.

Table of Contents

1. Molecular Beam Epitaxy: Fundamentals, Historical Background and Future Prospects 2. Molecular Beam Epitaxy in the Ultra-Vacuum of Space: Present and Near Future 3. Growth of Semiconductor Nanowires by Molecular Beam Epitaxy 4. Droplet Epitaxy of Nanostructures 5. Self-assembled Quantum Dots 6. Migration Enhanced Epitaxy of Low Dimensional Structures 7. Surfactant-modified Epitaxy 8. MBE Growth of High Mobility 2DEG 9. MBE of GaAsBi 10. Molecular Beam Epitaxy of GaAsBi and Related Quaternary Alloys 11. MBE of Dilute Nitride Optoelectronic Devices 12. The Effects of Antimony During MBE Growth 13. Nonpolar Cubic III Nitrides: From the Basics of Growth to Device Applications 14. In-rich InGaN 15. Molecular Beam Epitaxy of IV-VI Compounds: Heterostructures/Superlattices/Devices 16. Epitaxial Growth f Thin Films And Quantum Structures of II-VI Visible-Band Gap Semiconductors 17. MBE of Semiconducting Oxides 18. ZnO Materials and Devices grown by MBE 19. MBE of Complex Oxides 20. Epitaxial Systems Combining Oxides and Semiconductors 21. MBE Growth of As and Sb based Ferromagnetic III-V Semiconductor 22. Epitaxial Magnetic Layers Grown by MBE : Model Systems to Study the Physics in Nanomagnetism and Spintronic 23. Atomic Layer-by-Layer Molecular Beam Epitaxy of Superconducting and Magnetic Materials 24. MBE of Semimagnetic Quantum Dots 25. MBE Growth of Graphene 26. Growth and Characterization of Fullerene/GaAs Interfaces and C60 Doped GaAs and AlGaAs layers 27. Molecular Beam Epitaxial Growth and Exotic Electronic Structure of Topological Insulators 28. Thin Films of Organic Molecules: Interfaces and Epitaxial Growth 29. MBE of II-VI Lasers 30. MBE Growth of Terahertz Quantum Cascade Lasers 31. MBE as a Mass Production Technique 32. Mass production of optoelectronic devices: LEDs, lasers, VCSELs 33. Mass Production of Sensors Grown by MBE

Reviews

Molecular beam epitaxy is the process of depositing atoms or molecules onto a crystalline substrate under conditions of high or ultra-high vacuum. The substrate's crystal structure provides a template for the particles in the beam to organize themselves as they deposit onto the substrate. The technique can be put to a remarkably broad set of uses. In this 31 chapter volume, editor Henini.brings together a diverse set of physicists, electrical and mechanical engineers, and nanotechnologists to cover many of today's applications. --Reference & Research Book News, December 2013

Molecular beam epitaxy is the process of depositing atoms or molecules onto a crystalline substrate under conditions of high or ultra-high vacuum. The substrate's crystal structure provides a template for the particles in the beam to organize themselves as they deposit onto the substrate. The technique can be put to a remarkably broad set of uses. In this 31 chapter volume, editor Henini...brings together a diverse set of physicists, electrical and mechanical engineers, and nanotechnologists to cover many of today's applications. --Reference & Research Book News, December 2013

Author Information

Dr M. Henini has over 20 years’ experience of Molecular Beam Epitaxy (MBE) growth and has published >700 papers. He has particular interests in the MBE growth and physics of self-assembled quantum dots using electronic, optical and structural techniques. Leaders in the field of self-organisation of nanostructures will give an account on the formation, properties, and self-organization of semiconductor nanostructures.

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