Overview

Molecular beam epitaxy has been extended to an ever-widening variety of materials while maintaining key advantages over other techniques of epitaxial film growth such as chemical vapor deposition (CVD), liquid phase epitaxy (LPE), metal-organic vapor phase epitaxy (MOVPE) and related techniques. In this volume the Editor and Contributors have set out to describe the use of MBE for a range of key materials systems which are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices. Contents Include: The Technology and Design of Molecular Beam Epitaxy Systems Molecular Beam Expitaxy of High-Quality GaAs and AIGaAs Gas-Source Molecular Beam Epitaxy: Gaxin1-yAs1-yPy/Inp MBE with Nonelemental Sources, Hetrostructure and Device Properties Molecular Beam Epitaxy of Wide Gap II-VI Semiconductor Heterostructures Elemental Semiconductor Heterostructures - Growth, Properties, and Applications MBE Growth of High TC Superconductors MBE Growth of Artificially-Layered Magnetic Metal Structures Reflection High Energy Electron Diffraction Studies of the Dynamics of Molecular Beam Epitaxy.

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.. .the basic facts of the technique are laid out...well-known researchers present accounts of the use of MBE for making different types of materials... -JOM.

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