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OverviewMetallic Spintronic Devices provides a balanced view of the present state of the art of metallic spintronic devices, addressing both mainstream and emerging applications from magnetic tunneling junction sensors and spin torque oscillators to spin torque memory and logic. Featuring contributions from well-known and respected industrial and academic experts, this cutting-edge work not only presents the latest research and developments but also: * Describes spintronic applications in current and future magnetic recording devices * Discusses spin-transfer torque magnetoresistive random-access memory (STT-MRAM) device architectures and modeling * Explores prospects of STT-MRAM scaling, such as detailed multilevel cell structure analysis * Investigates spintronic device write and read optimization in light of spintronic memristive effects * Considers spintronic research directions based on yttrium iron garnet thin films, including spin pumping, magnetic proximity, spin hall, and spin Seebeck effects * Proposes unique solutions for low-power spintronic device applications where memory is closely integrated with logic Metallic Spintronic Devices aims to equip anyone who is serious about metallic spintronic devices with up-to-date design, modeling, and processing knowledge. It can be used either by an expert in the field or a graduate student in course curriculum. Full Product DetailsAuthor: Xiaobin WangPublisher: Taylor & Francis Inc Imprint: CRC Press Inc ISBN: 9781466588455ISBN 10: 1466588454 Pages: 273 Publication Date: 02 July 2014 Audience: General/trade , College/higher education , General , Tertiary & Higher Education Format: Electronic book text Publisher's Status: Active Availability: In stock We have confirmation that this item is in stock with the supplier. It will be ordered in for you and dispatched immediately. Table of ContentsPreface About the Editor Contributors Perpendicular Spin Torque Oscillator and Microwave-Assisted Magnetic Recording Jian-Gang (Jimmy) Zhu Spin-Transfer-Torque MRAM: Device Architecture and Modeling Xiaochun Zhu and Seung H. Kang The Prospect of STT-RAM Scaling Yaojun Zhang, Wujie Wen, Hai Li, and Yiran Chen Spintronic Device Memristive Effects and Magnetization Switching Optimizing Xiaobin Wang Magnetic Insulator-Based Spintronics: Spin Pumping, Magnetic Proximity, Spin Hall, and Spin Seebeck Effects on Yttrium Iron Garnet Thin Films Yiyan Sun, Zihui Wang, and Lei Lu Electric Field-Induced Switching for Magnetic Memory Devices Pedram Khalili and Kang L. Wang IndexReviewsAuthor InformationXiaobin Wang is director at Avalanche Technology and consultant at Caraburo Consulting LLC and Ingredients LLC. He holds a Ph.D from the University of California, San Diego. Dr. Wang has published over 100 articles and holds 50 US patents, approved or pending. He previously worked at Western Digital and Seagate Technology. His work in memory and data storage includes device design, advanced technology gap closure, prediction of system performance through bottom-up (from physics to system performance) and top-down (from system performance to component requirements) approaches, company product platform and basic technology roadmap modeling, new concept initiation, and intellectual property analysis. Tab Content 6Author Website:Countries AvailableAll regions |