Metal Impurities in Silicon-Device Fabrication

Author:   Klaus Graff
Publisher:   Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
Edition:   2nd ed. 2000. Softcover reprint of the original 2nd ed. 2000
Volume:   24
ISBN:  

9783642629655


Pages:   270
Publication Date:   21 October 2012
Format:   Paperback
Availability:   Manufactured on demand   Availability explained
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Metal Impurities in Silicon-Device Fabrication


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Overview

Metal Impurities in Silicon-Device Fabrication treats the transition-metal impurities generated during the fabrication of silicon samples and devices. The different mechanisms responsible for contamination are discussed, and a survey is given of their impact on device performance. The specific properties of the main and rare impurities in silicon are examined, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine the gettering efficiency. In all of these subjects, reliable and up-to-date data are presented. This monograph provides a thorough review of the results of recent scientific investigations, as well as the relevant data and properties of the various metal impurities in silicon. The new edition includes important recent data and a number of new tables.

Full Product Details

Author:   Klaus Graff
Publisher:   Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
Imprint:   Springer-Verlag Berlin and Heidelberg GmbH & Co. K
Edition:   2nd ed. 2000. Softcover reprint of the original 2nd ed. 2000
Volume:   24
Dimensions:   Width: 15.50cm , Height: 1.60cm , Length: 23.50cm
Weight:   0.450kg
ISBN:  

9783642629655


ISBN 10:   3642629652
Pages:   270
Publication Date:   21 October 2012
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   Manufactured on demand   Availability explained
We will order this item for you from a manufactured on demand supplier.

Table of Contents

1. Introduction.- 2. Common Properties of Transition Metals.- 2.1 General Behavior.- 2.2 Contamination of Silicon Wafers.- 2.3 Impact on Device Performance.- 3. Properties of Transition Metals in Silicon.- 3.1 Solubilities.- 3.2 Diffusivities.- 3.3 Dissolved Impurities.- 3.4 Precipitated Metals.- 4. Properties of the Main Impurities.- 4.1 Iron.- 4.2 Nickel.- 4.3 Copper.- 4.4 Molybdenum.- 4.5 Palladium.- 4.6 Platinum.- 4.7 Gold.- 5. Properties of Rare Impurities.- 5.1 Scandium.- 5.2 Titanium.- 5.3 Vanadium.- 5.4 Chromium.- 5.5 Manganese.- 5.6 Cobalt.- 5.7 Zinc.- 5.8 Zircon.- 5.9 Niobium.- 5.10 Ruthenium.- 5.11 Rhodium.- 5.12 Silver.- 5.13 Cadmium.- 5.14 Hafnium.- 5.15 Tantalum.- 5.16 Tungsten.- 5.17 Rhenium.- 5.18 Osmium.- 5.19 Iridium.- 5.20 Mercury.- 6. Detection Methods.- 6.1 Detection of Total Impurity Content.- 6.2 Detection of Dissolved Impurities.- 6.3 Detection of Precipitates.- 7. Requirements of Modern Technology.- 7.1 Reduction of Contamination.- 8. Gettering of Impurities.- 8.1 Gettering Mechanisms.- 8.2 Control of Gettering Efficiency.- 9. Conclusion and Future Trends.- References.

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