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OverviewMaterials Fundamentals of Dielectric Gates treats materials fundamentals of the novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scaling of the CMOS devices. Since many of the problems encountered in the world of CMOS are also relevant for other semiconductors such as GaAs, a comprehensive review of recent developments in this field is thus also given Full Product DetailsAuthor: Alexander A. Demkov , Alexandra NavrotskyPublisher: Springer-Verlag New York Inc. Imprint: Springer-Verlag New York Inc. Edition: 2005 ed. Dimensions: Width: 15.50cm , Height: 2.60cm , Length: 23.50cm Weight: 0.883kg ISBN: 9781402030772ISBN 10: 1402030770 Pages: 476 Publication Date: 14 July 2005 Audience: Professional and scholarly , Professional & Vocational Format: Hardback Publisher's Status: Active Availability: Awaiting stock  The supplier is currently out of stock of this item. It will be ordered for you and placed on backorder. Once it does come back in stock, we will ship it out for you. Table of ContentsPreface. 1: Materials and Physical Properties of High-K Oxide Films; Ran Liu. 2: Device Principles of High-K Dielectrics; Kurt Eisenbeiser. 3: Thermodynamics of Oxide Systems Relevant to Alternative Gate Dielectrics; Alexandra Navrotsky and Sergey V. Ushakov. 4: Electronic Structure and Chemical Bonding in High-K Transition Metal and Lanthanide Series Rare Earth Alternative Gate Dielectrics: Applications to Direct Tunneling and Defects at Dielectric Interfaces; Gerald Lucovsky. 5: Atomic Structure, Interfaces and Defects of High Dielectric Constant Gate Oxides; J. Robertson and P.W. Peacock. 6: Dielectric Properties of Simple and Complex Oxides from First-Principles; U.V. Waghmare and K.M. Rabe. 7: IVb Transition Metal Oxides and Silicates: An Ab Initio Study; Gian-Marco Rignanese. 8: The Interface Phase and Dielectric Physics for Crystalline Oxides on Semiconductors; Rodney Mckee. 9: Interfacial Properties of Epitaxial Oxide/Semiconductor Systems; Y. Liang and A.A. Demkov. 10: Functional Structures; Matt Copel. 11: Mechanistic Studies of Dielectric Growth on Silicon; Martin M. Frank and Yves J. Chabal. 12: Methodology for Development of High-k Stacked Gate Dielectrics on III–V Semiconductors; Matthias Passlack. IndexReviewsAuthor InformationAlexander Demkov received his Ph.D. in Physics at Arizona State University in 1995 secializing in electronic structure theory. His postdoctoral research was focused on electronic properties of zeolites. Het joined Motorola R&D in 1997, and has been working on materials problems of advanced CMOS gate stack, and quantum transport. He has authored over 60 papers, and has two issued patents. He has organized several national and international meetings, serves as an associate editor ofg the Journal of Vacuum Science and Technology, and is a member of the ITRS working group on Emerging Research Materials. He is adjunct professor of Physics at Arizona State University. Alexandra Navrotsky was educated at the Bronx High School of Science and the University of Chicago (B.S., M.S., and Ph.D. in physical chemistry). After postdoctoral work in Germany and at Penn State University, she joined the faculty in Chemistry at Arizona State University, where she remained till her move to the Department of Geological and Geophysical Sciences at Princeton University in 1985. She chaired that department from 1988 to 1991 and has been active in the Princeton Materials Institute. On July 1, 1997, she became an interdisciplinary professor of Ceramic, Earth and Environmental Materials Chemistry at the University of California at Davis and is now Edward Roessler Chair in Mathematical and Physical Sciences. She directs the NEAT (Nanomaterials in the Environment, Agriculture and Technology) activities at Davis, including a faculty hiring initiative, an NSF-IGERT, and a new Organized Research Unit. Tab Content 6Author Website:Countries AvailableAll regions |
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