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OverviewMajor benefits to system architecture would result if cooling systems for components could be eliminated without compromising performance. This book surveys the state-of-the-art for the three major wide bandgap materials (silicon carbide, nitrides, and diamond), assesses the national and international efforts to develop these materials, identifies the technical barriers to their development and manufacture, determines the criteria for successfully packaging and integrating these devices into existing systems, and recommends future research priorities. Table of Contents Front Matter Executive Summary Backgorund State of the Art of Wide Bandgap Materials Device Physics: Behavior at Elevated Temperatures Generic Technical Issues Associated with Materials for High-Temperatures... High-Temperature Electronic Packaging Device Testing for High-Temperature Electronic Materials Conclusions and Recommendations References Appendix A: Silicon as a High-Temperature Material Appendix B: Gallium Arsenide as a High Temperature Material Appendix C: High-Temperature Microwave Devices Appendix D: Biographical Sketches of Committee Members Full Product DetailsAuthor: National Research Council , Division on Engineering and Physical Sciences , National Materials Advisory Board , Commission on Engineering and Technical SystemsPublisher: National Academies Press Imprint: National Academies Press ISBN: 9780309053358ISBN 10: 0309053358 Pages: 136 Publication Date: 14 October 1995 Audience: Professional and scholarly , Professional & Vocational Format: Paperback Publisher's Status: Active Availability: In Print  This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us. Table of Contents1 Front Matter; 2 Executive Summary; 3 Backgorund; 4 State of the Art of Wide Bandgap Materials; 5 Device Physics: Behavior at Elevated Temperatures; 6 Generic Technical Issues Associated with Materials for High-Temperatures..; 7 High-Temperature Electronic Packaging; 8 Device Testing for High-Temperature Electronic Materials; 9 Conclusions and Recommendations; 10 References; 11 Appendix A: Silicon as a High-Temperature Material; 12 Appendix B: Gallium Arsenide as a High Temperature Material; 13 Appendix C: High-Temperature Microwave Devices; 14 Appendix D: Biographical Sketches of Committee MembersReviewsAuthor InformationCommittee on Materials for High-Temperature Semiconductor Devices, Commission on Engineering and Technical Systems, National Research Council Tab Content 6Author Website:Countries AvailableAll regions |
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