Overview

Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.

Full Product Details

Author:   Koichiro Ishibashi ,  Kenichi Osada
Publisher:   Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
Imprint:   Springer-Verlag Berlin and Heidelberg GmbH & Co. K
Edition:   2011 ed.
Volume:   31
Dimensions:   Width: 15.50cm , Height: 1.30cm , Length: 23.50cm
Weight:   0.407kg
ISBN:  

9783642195679

ISBN 10:   3642195679
Pages:   144
Publication Date:   18 August 2011
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Hardback
Publisher's Status:   Active
Availability:   Out of stock  
The supplier is temporarily out of stock of this item. It will be ordered for you on backorder and shipped when it becomes available.

Table of Contents

Preface.- Introduction.- Fundamentals of SRAM Memory Cell.- Electrical Stability.- Sensitivity Analysis.- Memory Cell Design Technique for Low Power SOC.- Array Design Techniques.- Dummy Cell Design.- Reliable Memory Cell Design.- Future Technologies

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