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OverviewSuccess in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design. Full Product DetailsAuthor: Koichiro Ishibashi , Kenichi OsadaPublisher: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG Imprint: Springer-Verlag Berlin and Heidelberg GmbH & Co. K Edition: 2011 ed. Volume: 31 Dimensions: Width: 15.50cm , Height: 0.80cm , Length: 23.50cm Weight: 0.250kg ISBN: 9783642270185ISBN 10: 3642270182 Pages: 144 Publication Date: 27 November 2013 Audience: Professional and scholarly , Professional & Vocational Format: Paperback Publisher's Status: Active Availability: Manufactured on demand  We will order this item for you from a manufactured on demand supplier. Table of ContentsPreface.- Introduction.- Fundamentals of SRAM Memory Cell.- Electrical Stability.- Sensitivity Analysis.- Memory Cell Design Technique for Low Power SOC.- Array Design Techniques.- Dummy Cell Design.- Reliable Memory Cell Design.- Future TechnologiesReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |
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