Overview

The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits. Reviews the history of radiation-hard technology, providing background information for those new to the field. Includes a comprehensive review of the literature and an annotated listing of research activities in radiation-hardness research.

Full Product Details

Author:   T. P. Ma (Yale University) ,  Paul V. Dressendorfer (Sandia National Laboratories, Albuquerque, New Mexico)
Publisher:   John Wiley & Sons Inc
Imprint:   Wiley-Interscience
Edition:   annotated edition
Dimensions:   Width: 16.90cm , Height: 3.40cm , Length: 24.50cm
Weight:   0.962kg
ISBN:  

9780471848936

ISBN 10:   047184893
Pages:   608
Publication Date:   07 June 1989
Audience:   College/higher education ,  Professional and scholarly ,  Postgraduate, Research & Scholarly ,  Professional & Vocational
Format:   Hardback
Publisher's Status:   Active
Availability:   Out of stock  
The supplier is temporarily out of stock of this item. It will be ordered for you on backorder and shipped when it becomes available.

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T. P. Ma and Paul V. Dressendorfer are the authors of Ionizing Radiation Effects in MOS Devices and Circuits, published by Wiley.

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