Ion Implantation and Beam Processing

Author:   J S Williams ,  J M Poate (AT&T Bell Laboratories, New Jersey)
Publisher:   Academic Press
ISBN:  

9781306583336


Pages:   432
Publication Date:   01 January 2014
Format:   Electronic book text
Availability:   In stock   Availability explained
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Ion Implantation and Beam Processing


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Overview

Ion Implantation and Beam Processing covers the scientific and technological advances in the fields of ion implantation and beam processing. The book discusses the amorphization and crystallization of semiconductors; the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets; and the high energy density collision cascades and spike effects. The text also describes the implantation of insulators (ices and lithographic materials); the ion-bombardment-induced compositions changes in alloys and compounds; and the fundamentals and applications of ion beam and laser mixing. The high-dose implantation and the trends of ion implantation in silicon technology are also considered. The book further tackles the implantation in gaAs technology and the contacts and interconnections on semiconductors. Engineers and people involved in microelectronics will find the book invaluable.

Full Product Details

Author:   J S Williams ,  J M Poate (AT&T Bell Laboratories, New Jersey)
Publisher:   Academic Press
Imprint:   Academic Press
ISBN:  

9781306583336


ISBN 10:   1306583330
Pages:   432
Publication Date:   01 January 2014
Audience:   General/trade ,  General
Format:   Electronic book text
Publisher's Status:   Active
Availability:   In stock   Availability explained
We have confirmation that this item is in stock with the supplier. It will be ordered in for you and dispatched immediately.

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