III-V Nitride Semiconductors: Applications and Devices

Author:   Edward T. Yu ,  Omar Manasreh
Publisher:   Taylor & Francis Inc
ISBN:  

9781560329749


Pages:   714
Publication Date:   06 September 2002
Format:   Hardback
Availability:   In Print   Availability explained
This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us.

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III-V Nitride Semiconductors: Applications and Devices


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Overview

The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as well as a detailed introduction to selected materials and processing issues of general relevance for these applications. This compilation is very timely given the level of interest and the current stage of research in nitride semiconductor materials and device applications. This volume consists of chapters written by a number of leading researchers in nitride materials and device technology addressing Ohmic and Schottky contacts, AIGalnN multiple quantum well laser diodes, nitride vertical cavity emitting lasers, and ultraviolet photodetectors. This unique volume provides a comprehensive review and introduction to application and devices based on GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers.

Full Product Details

Author:   Edward T. Yu ,  Omar Manasreh
Publisher:   Taylor & Francis Inc
Imprint:   CRC Press Inc
Dimensions:   Width: 15.20cm , Height: 4.60cm , Length: 22.90cm
Weight:   1.060kg
ISBN:  

9781560329749


ISBN 10:   1560329742
Pages:   714
Publication Date:   06 September 2002
Audience:   College/higher education ,  Postgraduate, Research & Scholarly
Format:   Hardback
Publisher's Status:   Active
Availability:   In Print   Availability explained
This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us.

Table of Contents

1. Ohmic Contacts to GaN 2. Characterization of Schottky Contacts on Nitride Semiconductors 3. Integration of GaN with Dissimilar Substrate Materials by Wafer Bonding and Laser Liftoff 4. Spontaneous and Piezoelectric Polarization in Nitride Heterostructures 5. AIGaN/GaN High Electron Mobility Transistors 6. Two-dimensional Electron Gas Transport Properties in Nitride Heterostructures Field Effect Transistors (HFETS) 7. Electron Transport in Wide-bandgap Semiconductors and Heterostructures 8. Gan Metal-semiconductor Field-effect Transistor 9. Piezoelectric Effect in Group III Nitride Based Heterostructures and Quantum Well Structure 10. AIGaInN MQW Laser Diodes 11. Blue Vertical Cavity Surface Emitting Lasers and InGaN Quantum Dot Laser 12. III-Nitride Based UV Photodetectors 13.III-Nitride-Based UV Photodetectors 14. AIGaN UV Photodetectors

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Yu, Edward T.

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