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OverviewFull Product DetailsAuthor: Rongming Chu (HRL Laboratories, LLC, CA, USA) , Keisuke Shinohara (Teledyne Scientific and Imaging, LLC, CA, USA)Publisher: Elsevier Science Publishing Co Inc Imprint: Academic Press Inc Weight: 0.970kg ISBN: 9780128175446ISBN 10: 0128175443 Pages: 546 Publication Date: 18 October 2019 Audience: Professional and scholarly , Professional & Vocational Format: Hardback Publisher's Status: Active Availability: Manufactured on demand We will order this item for you from a manufactured on demand supplier. Table of ContentsReviewsAuthor InformationRongming Chu is an Associate Professor at the Electrical Engineering Department of the Pennsylvania State University. Rongming Chu did his Ph.D. study at UC-Santa Barbara, working on GaN microwave transistors. After finishing his Ph.D. in 2008, he spent two years at Transphorm Inc., then a start-up company commercializing GaN power switching technology. From 2010 to 2018, he was with HRL Laboratories as a Research Staff Member and later as a Senior Research Staff, working on GaN power device technology development. Rongming has more than 30 issued US patents and over 70 publications in the field of GaN materials, devices and circuits. He is a senior member of IEEE and served on the technical program committees of the IEEE Workshop on Wide Bandgap Power Device and Applications, the IEEE Lester Eastman Conference, and the Asia-Pacific Workshop on Wide Bandgap Semiconductors. He is a recipient of the IEEE Electron Device Society’s George E. Smith Award. Keisuke Shinohara is a principal scientist at Teledyne Scientific and Imaging in the USA. He received his Ph.D. degree in Solid State Physics from Osaka University, Japan in 1998. He has over 25 years of experience on material and transistor development based on III-V compound semiconductors such as InP-HEMTs, InP-HBTs, and GaN-HEMTs. His current research interests are the design, fabrication and characterization of novel III-N-based devices for RF and power electronics applications. He is currently a principal investigator of DARPA DREaM program, leading next generation high power-density, efficient, and linear GaN transistor development. Prior to joining Teledyne, he was with HRL Laboratories, and served as a principal investigator of DARPA NEXT and MPC programs. He has authored or coauthored more than 120 peer reviewed journals and international conference papers including 30 invited presentations, and 2 book chapters. He holds 21 patents in this technical field. He is a senior member of IEEE Electron Device Society and served on the technical committee of several international conferences including International Electron Device Meeting (IEDM), Device Research Conference (DRC), Microwave Theory and Techniques Society (MTT-S), International Conference on Indium Phosphide and Related Materials (IPRM), and (Lester Eastman Conference (LEC). Tab Content 6Author Website:Countries AvailableAll regions |