High Speed Circuits For Lightwave Communications, Selected Topics In Electronics And Systems, Vol 1

Author:   Keh-chung Wang (.)
Publisher:   World Scientific Publishing Co Pte Ltd
Volume:   13
ISBN:  

9789810235369


Pages:   372
Publication Date:   26 January 1999
Format:   Hardback
Availability:   Out of stock   Availability explained
The supplier is temporarily out of stock of this item. It will be ordered for you on backorder and shipped when it becomes available.

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High Speed Circuits For Lightwave Communications, Selected Topics In Electronics And Systems, Vol 1


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Full Product Details

Author:   Keh-chung Wang (.)
Publisher:   World Scientific Publishing Co Pte Ltd
Imprint:   World Scientific Publishing Co Pte Ltd
Volume:   13
Dimensions:   Width: 17.40cm , Height: 2.20cm , Length: 23.00cm
Weight:   0.821kg
ISBN:  

9789810235369


ISBN 10:   9810235364
Pages:   372
Publication Date:   26 January 1999
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Hardback
Publisher's Status:   Active
Availability:   Out of stock   Availability explained
The supplier is temporarily out of stock of this item. It will be ordered for you on backorder and shipped when it becomes available.

Table of Contents

High speed circuits for lightwave communications, K. Pedrotti; Si and SiGe bipolar ICs for 10 to 40 Gb/s optical-fibre TDM links, H.-M. Rein; low transimpedance-fluctuation design for 10-GHz Si-bipolar preamplifier in 10 Gb/s optical transmission systems, T. Masuda et al; 20-40-Gbit/s-class GaAs MESFET digital ICs for future optical fibre communications systems, T. Otsuji et al; 20-40 Gbit/s GaAs-HEMT chip set for optical data receiver, Z. Lao et al; AlGaAs/GaAs HBT circuits for optical TDM communications, K. Runge et al; high speed cross-point switches, C.E. Chang et al; HBT ICs for OC-192 equipment, J. Sitch and R. Surridge; present status and future prospects of high-speed lightwave ICs based on InP, E. Sano et al; InP HBT ICs for 40 Gb/s optical links, M. Mokhtari et al; a review of recent progress in InP-based optoelectronic integrated circuit receiver front-ends, R.H. Walden; ultrahigh fmax AlInAs/GaInAs transferred-substrate heterojunction bipolar transistors for integrated circuits applications, B. Agarwal et al.

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