High-Mobility Two-Dimensional Hole Gases in III-V Semiconductor Heterostructures: Growth and Transport Properties

Author:   Marika Hirmer
Publisher:   Universitatsverlag Regensburg GmbH
Volume:   29
ISBN:  

9783868450958


Pages:   144
Publication Date:   19 February 2013
Format:   Paperback
Availability:   In stock   Availability explained
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High-Mobility Two-Dimensional Hole Gases in III-V Semiconductor Heterostructures: Growth and Transport Properties


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Overview

In this work, we investigated very high quality carbon-doped two-dimensional hole gases (2DHGs). The first part deal with high-mobility GaAs/AlGaAs quantum wells (QWs). Optimizing the heterostructure design, the hole mobility was extremely increased. Quantum Hall effect, photoconductivity effect, Rashba spin splitting, fractional quantum Hall effect (revealing interesting anisotropy in the thermally activated transport) and the band structure were investigated. In the second part, we studied InAs/InGaAs/InAlAs QWs with high spin-orbit coupling. A great success was the preparation of a carbon p-type doping in QWs with high indium content. A conductivity type inversion from p- to n-type with changing composition was observed. The heterostructures exhibit weak-antilocalization, hole-hole interaction effect and strong transport anisotropy. The spin splitting can be engineered providing small changes in the structure design. Both topics are of major interest for spintronics research.

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Author:   Marika Hirmer
Publisher:   Universitatsverlag Regensburg GmbH
Imprint:   Universitatsverlag Regensburg GmbH
Volume:   29
Weight:   0.371kg
ISBN:  

9783868450958


ISBN 10:   3868450955
Pages:   144
Publication Date:   19 February 2013
Audience:   General/trade ,  General
Format:   Paperback
Publisher's Status:   Active
Availability:   In stock   Availability explained
We have confirmation that this item is in stock with the supplier. It will be ordered in for you and dispatched immediately.
Language:   German

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