Free Delivery Over $100
|
|
|||
|
||||
OverviewFull Product DetailsAuthor: Michel HoussaPublisher: Taylor & Francis Ltd Imprint: Institute of Physics Publishing Dimensions: Width: 15.60cm , Height: 3.80cm , Length: 23.40cm Weight: 1.179kg ISBN: 9780750309066ISBN 10: 0750309067 Pages: 614 Publication Date: 01 December 2003 Audience: Professional and scholarly , Professional & Vocational Format: Hardback Publisher's Status: Active Availability: In Print  This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us. Table of ContentsIntroduction The need for high-k gate dielectrics and materials requirement Deposition techniques ALCVD, MOCVD, PLD, MBE Characterization Physico-chemical characterization X-ray and electron spectroscopies Oxygen diffusion and thermal stability Defect characterization by ESR Band alignment determined by photo-injection Electrical characteristics Theory of defects in high-k materials Bonding constraints and defect formation at Si/high-k interfaces Band alignment calculations Electron mobility at the Si/high-k interface Model for defect generation during electrical stress Technological aspects Device integration issues Device concepts for sub-100 nm CMOS technologies Transistor characteristics Nonvolatile memories based on high-k ferroelectric layersReviewsHigh-K Gate Dielectrics is a timely review of this rapidly evolving research field. The individual chapters provide a complete, in-depth coverage of current understanding, making the book an excellent source of reference for researchers in High-K gate dielectrics and newcomers to the field. The impressive work and methods should make the book of interest for a readership beyond those immediately involved in high-k gate dielectric research. I recommend the book as a very good reference source and overview to researchers with interest in high-k gate dielectrics. -Susanne Stemmer, Materials Today, September 2004 Author InformationMichel Houssa Laboratoire Materiaux et Microelectronique de Provence, Universite de Provence, France Silicon Processing and Device Technology Division, IMEC, Belgium Tab Content 6Author Website:Countries AvailableAll regions |
||||
