Overview

Novel microelectronic and optoelectronic devices are based on semiconductor heterostructures. The present book discusses various questions related to the use of new materials, such as compound semiconductors based on high band-gap nitrides and low band-gap antimonides, and new procedures, such as low-temperature epitaxial growth, and new principles, such as nanostructures, quantum wires and dots, the aim being to achieve high-performance heterostructural electronic devices.

Full Product Details

Author:   Peter Kordos ,  Josef Novák
Publisher:   Springer
Imprint:   Springer
Edition:   Softcover reprint of the original 1st ed. 1998
Volume:   48
Dimensions:   Width: 16.00cm , Height: 1.80cm , Length: 24.00cm
Weight:   1.060kg
ISBN:  

9780792350132

ISBN 10:   0792350138
Pages:   320
Publication Date:   31 March 1998
Audience:   College/higher education ,  Professional and scholarly ,  Undergraduate ,  Postgraduate, Research & Scholarly
Format:   Paperback
Publisher's Status:   Active
Availability:   In Print  
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Table of Contents

Preface. Section I: Physics and Technology. Physics and Technology of Semiconductor Nanostructures; H. Lüth. Molecular Beam Epitaxy: Physics and Technology; M. Henini. 6H-SiC(001)/AlN/GaN Epitaxial Heterojunctions and Their Valence Band Offset; A. Rizzi. Optical Properties of Antimonide Based Heterostructures Grown by All-Organometallic Vapour Phase Epitaxy; T. Tuomi. MOVPE Technology for Multiwafer Production: Ga-Al-In-N Heterostructures and Optical and Electrical Properties of Deposited Layers; M. Deschler, et al. Molecular Beam Epitaxy of Narrow-Gap III-V Antimonides for Infrared Detectors and Sources; G. Borghs, et al. The Stability of the Misfit Dislocation Array at the Substrate-Epitaxial Layer Interface; E. Dobrocka, et al. Surface Reconstruction Processes in the Scope of the BCF Theory of Crystal Growth; D. Nohavica. Influence of Si Doping on Epitaxial Lateral Overgrowth of GaAs; Z.R. Zytkiewicz, D. Dobosz. Temperature Dependent Quasiplateaux of Hall Effect in Multi-delta-Layers; J.J. Mares, et al. Self-Consistent Analysis of Electronic Structure of Coupled delta-Doped Layers in GaAs; J. Osvald, E. Burian. Semiquantal Dynamics of Electrons in Quantum Heterostructures; L.V. Yurchenko, V.B. Yurchenko. Phase-Shift Analysis of Two-Dimensional Carrier-Carrier Scattering; A. Mosková, M. Mosko. Carrier-Impurity Collisions in a Narrow Quantum Wire: Born Approximation Versus Exact Solution; P. Vágner, M. Mosko. Low Temperature Hydride Vapor Phase Epitaxy of GaN Layers on Different Substrates; R. Fornari, et al. Study of Gallium Nitride Films Grown by MOCVD; R. Paszkiewicz, et al. A Comparison of Galvanomagnetic Properties of GaN Epitaxial Layers Grown on Silicon and Sapphire Substrates; K. Somogyi, Yu.V. Zhilyaev. The Effectof theSubstrate Thermal Stresses on the Misfit Dislocation Generation; E. Dobročka. Experimental Study of the Thermal Decomposition of Heteroepitaxial and Bulk InP; F. Riesz, et al. Antiphase Boundaries in the Ordered InGaP Epitaxial Layers Prepared by MOCVD; M. Harvanka, et al. Critical Thickness Investigation of InxGa1-xAs/GaAs by X-Ray Measurements; M. Tlaczala, et al. MOVPE Growth of InGaP/GaAs Interfaces; R. Kúdela, et al. GaAs and InP on Si with InGaP Buffer Layers; H.-H. Wehmann, et al. Crystal Structure and Photoluminescence of In1-xGaxAs Heteroepitaxial Layers Grown on InP Substrates; V.A. Bykovsky, et al. Investigation of InxGa1-xAs/GaAs Heterostructures by Electrochemical Method; A. Nemcsics, L. Dobos. Technological and Physical Aspects of the Improvement of Uniformity of Pure and Lightly Doped GaAs Epitaxial Layers; V.A. Bykovsky, et al. Characterization of InP Layers Prepared by LPE Using Ytterbium and Erbium Admixture; O. Procházková, et al. Characterization of InP:Zn Layers by Photoluminescence and Photo-Electrochemical C-V Profiling; V.F. Andrievski, et al. Spectroscopic Ellipsometry: Application to Complex Optoelectronic Layer Systems; B. Rheinlánder, et al. Section II: Heterostructures and Devices. InGaP/GaAs Carbon-Doped Heterostructures for Heterojunction Bipolar Transistors; Q.J. Hartmann, et al. InxGa1-xP Quantum Wire Structures Grown by MOVPE Technique; J. Novák. Low-Temperature Grown Molecular-Beam Epitaxial GaAs for Terahertz Photomixing; P. Kordoš. InP-HEMT-Based Digital Circuit Technology; I. Adesida, A. Mahajan. Layers and Heterostructures for High

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