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OverviewFull Product DetailsAuthor: Hadis MorkocPublisher: Wiley-VCH Verlag GmbH Imprint: Wiley-VCH Verlag GmbH Dimensions: Width: 20.20cm , Height: 22.50cm , Length: 28.00cm Weight: 6.010kg ISBN: 9783527407972ISBN 10: 3527407979 Pages: 3000 Publication Date: 30 October 2008 Audience: Professional and scholarly , Professional & Vocational Format: Hardback Publisher's Status: Out of Print Availability: Out of stock  Table of ContentsVol. 1: I. General Properties of Nitrides. II. Electronic Band Structure and Polarization Effects. III. Growth and Growth Methods of Nitride Semiconductors. IV. Extended Defects, Point Defects, Role of Hydrogen, Doping including Transition Metals. Vol. 2: I. Metal Contacts to GaN and Processing. II. Determination of Impurity and Carrier Concentrations. III. Carrier Transport in Semiconductors. IV. The p n Junction. V. Optical Processes in Semiconductors and Optical Properties of Nitride Semiconductors and Heterostructures. Vol. 3: I. Light Emitting Diodes and Lighting. II. Semiconductor Lasers. III. Field Effect Transistors and Heterojunction Bipolar Transistors.ReviewsAuthor InformationHadis Morkoc received his Ph.D. degree in Electrical Engineering from Cornell University. From 1978 to 1997 he was with the University of Illinois, then joined the newly established School of Engineering at the Virginia Commonwealth University in Richmond. He and his group have been responsible for a number of advancements in GaN and devices based on them. Professor Morkoc has authored several books and numerous book chapters and articles. He serves or has served as a consultant to some 20 major industrial laboratories. Professor Morkoc is, among others, a Fellow of the American Physical Society, the Material Research Society, and of the Optical Society of America. Tab Content 6Author Website:Countries AvailableAll regions |
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