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OverviewFull Product DetailsAuthor: Hadis MorkocPublisher: Wiley-VCH Verlag GmbH Imprint: Wiley-VCH Verlag GmbH Volume: v. 2 Dimensions: Width: 17.30cm , Height: 4.90cm , Length: 24.50cm Weight: 1.772kg ISBN: 9783527408382ISBN 10: 352740838 Pages: 883 Publication Date: 10 June 2008 Audience: Professional and scholarly , Professional & Vocational Format: Hardback Publisher's Status: Out of Print Availability: Out of stock  Table of ContentsPreface. Color tables. 1. Metal Contacts to GaN and Processing. 1.1. A Primer for Semiconductor-Metal Contacts. 1.2. Current Flow in Metal-Semiconductor Junctions. 1.3. GaN Schottky Barriers for High-Voltage Rectifiers. 1.4. Ohmic Contact Resistance. 1.5. Determination of the Contact Resistivity. 1.6. Ohmic Contacts to GaN. 1.7. Structural Analysis of Ohmic Contacts on GaN. 1.8. Etching Techniques for III Nitrides. 1.9. Implant Isolation. 1.10. Process Damage. 2. Determination of Impurity and Carrier Concentrations. 2.1. Impurity Binding Energy. 2.2. Conductivity Type: Hot Probe and Hall Measurements. 2.3. Semiconductor Statistics, Density of States, and Carrier Concentration. 2.4. Capacitance-Voltage Measurements. 3. Carrier Transport. 3.1. Prelude. 3.2. Carrier Scattering. 3.3. Calculated Mobility of GaN. 3.4. Scattering at High Fields. 3.5. Measurements of Mobility and Associated Fundamentals. 3.6. Multiband Effects and Mixed Conductivity. 3.7. van der Pauw Method. 3.8. Quantum Hall Effect - Shubnikov-de Hass. 3.9. Measured Mobility in n-type GaN. 3.10. Measurement of High-Field Telectron Velocity in n-type GaN. 3.11. Carrier transport in p-Type GaN. 3.12. Carrier Transport in InN. 3.13. Carrier Transport in A1N. 3.14. Transport in Unintentionally Doped and High-Resistivity GaN. 3.15. Carrier Transport in Alloys. 3.16. Two-Dimensional transport in n-Type GaN. 3.17. Interface Roughness Scattering. 3.18. Quantum Transport in AlGaN/GaN 2 DEG. 3.19. Observations. 4. The p-n Junction. 4.1. Heterojunctions. 4.2. Band Discontinuities. 4.3. Electrostatic Characteristics of p-n Heterojunctions. 4.4. Current-Voltage Characteristics of p-n Junctions. 4.5. I-V Characteristics of Ideal GaN-Based p-n Junctions. 4.6. I-V Characteristics of GaN-Based p-n Junctions. 4.7. High-Voltage Blocking GaN and AlGaN-Based p-n Junctions. 5. Optical Processes in Semiconductors and Optical Properties of Nitride Semiconductors and Heterostructures. 5.1. Basics of Photoluminescence. 5.2. Band-to-Band Transitions. 5.3. Optical Transitions in GaN. 5.4. Group-II Element Related Transitions. 5.5. Blue Luminescence Band in Undoped GaN. 5.6. Surface-Related Blue Luminescence in Etched GaN. 5.7. Optical Properties of GaN Doped with Rare Earths. 5.8. Optical Properties of Alloys. 5.9. Optical Properties of Nitride Heterostructures. 5.10. Quantum Dots. 5.11. Intraband or Intersubband Transitions in GaN/AlGaN Quantum Wells. 5.12. Nonlinear Optical Properties of III-Nitrides. References. Index. Appendix.ReviewsAuthor InformationHadis Morkoc received his Ph.D. degree in Electrical Engineering from Cornell University. From 1978 to 1997 he was with the University of Illinois, then joined the newly established School of Engineering at the Virginia Commonwealth University in Richmond. He and his group have been responsible for a number of advancements in GaN and devices based on them. Professor Morkoc has authored several books and numerous book chapters and articles. He serves or has served as a consultant to some 20 major industrial laboratories. Professor Morkoc is, among others, a Fellow of the American Physical Society, the Material Research Society, and of the Optical Society of America. Tab Content 6Author Website:Countries AvailableAll regions |
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