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OverviewThis book reviews recent advances and current technologies used to produce micro-electronic and optoelectronic devices from both III-V and II-VI compound semiconductors. The emphasis is on the gallium arsenide and indium phosphide-based III-V materials, however, other III-V and some of the II-VI materials are also discussed. The chapters provide a complete overview of the technologies necessary to grow bulk single crystal substrates, grow hetero or homoepitaxially films, and process advanced devices such as HBT's QW diode lasers, etc. The epitaxial growth techniques of metal-organic chemical vapor deposition and molecular beam epitaxy are reviewed. Processing technologies for electrical contracts, dielectric isolation, and interface passivation are described. Processing procedures for ion implantation, wet and dry etching, rapid thermal processing and epitaxial lift-off are described. Techniques to characterize the materials and devices by electronics, ions, and photons are described, and a summary is given of microelectronic and optoelectronic devices, along with their packaging. Contents Include: Bulk Crystal Growth MOCVD of Compound Semiconductor Layers Molecular Beam Epitaxy Physical and Chemical Deposition of Metals as Ohmic Contacts to InP and Related Materials Surface Processing of III-V Semiconductors Ion Implantation Induced Extended Defects in GaAs Passivation of GaAs and InP Wet and Dry Etching of Compound Semiconductors Rapid Isothermal Processing (RIP) Epitaxial Lift-Off for Thin Film Compound Semiconductor Devices Packaging Chemical, Structural and Electronic Characterization of Compound Semiconductor Surfaces and Interfaces by X-ray Photoelectron Spectroscopy and Diffraction Techniques Characterization of Compound Semiconductor Material by Ion Beams Optical Characterization of Compound Semiconductors Gallium Arsenide Microelectronic Devices and Circuits Optoelectronics Devices Full Product DetailsAuthor: Paul H. Holloway (Microelectronics Center of North Carolina, Research Triangle, USA) , Gary E. McGuirePublisher: William Andrew Publishing Imprint: William Andrew Publishing Dimensions: Width: 15.20cm , Height: 6.60cm , Length: 22.90cm Weight: 1.760kg ISBN: 9780815513742ISBN 10: 0815513747 Pages: 926 Publication Date: 31 December 1996 Audience: Professional and scholarly , Professional & Vocational Format: Hardback Publisher's Status: Unknown Availability: Awaiting stock  Table of ContentsBulk Crystal GrowthMOCVD of Compound Semiconductor LayersMolecular Beam EpitaxyPhysical and Chemical Deposition of Metals as Ohmic Contacts to InP and Related MaterialsSurface Processing of III-V SemiconductorsIon Implantation Induced Extended Defects in GaAsPassivation of GaAs and InPWet and Dry Etching of Compound SemiconductorsRapid Isothermal Processing (RIP)Epitaxial Lift-Off for Thin Film Compound Semiconductor DevicesPackagingChemical, Structural and Electronic Characterization of Compound Semiconductor Surfaces and Interfaces by X-ray Photoelectron Spectroscopy and Diffraction TechniquesCharacterization of Compound Semiconductor Material by Ion BeamsOptical Characterization of Compound SemiconductorsGallium Arsenide Microelectronic Devices and CircuitsOptoelectronic DevicesAcknowledgmentsReferencesIndexReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |
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