Free Delivery Over $100
|
|
|||
|
||||
OverviewEpitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial polar-on-nonpolar heterointerface. This thesis reports almost lattice-matched growth of thin gallium phosphide films as a viable model system for III-V/Si(100) interface investigations. The impact of antiphase disorder on the heteroepitaxial growth surface provides quantitative optical in situ access to one of the most notorious defect mechanisms, even in the vapor phase ambient common for compound semiconductor technology. Precise control over the surface structure of the Si(100) substrates prior to III-V nucleation prevents the formation of antiphase domains. The hydrogen-based process ambient enables the preparation of anomalous double-layer step structures on Si(100), highly beneficial for subsequent III-V integration. Full Product DetailsAuthor: Henning DöscherPublisher: Springer International Publishing AG Imprint: Springer International Publishing AG Edition: 2013 ed. Dimensions: Width: 15.50cm , Height: 1.30cm , Length: 23.50cm Weight: 3.672kg ISBN: 9783319028798ISBN 10: 3319028790 Pages: 143 Publication Date: 11 December 2013 Audience: Professional and scholarly , Professional & Vocational Format: Hardback Publisher's Status: Active Availability: Manufactured on demand  We will order this item for you from a manufactured on demand supplier. Table of ContentsIntroduction.- Experimental.- Si(100) surfaces in chemical vapor environments.- GaP(100) and InP(100) surfaces.- GaP growth on Si(100) and anti-phase disorder.- Conclusion.ReviewsAuthor InformationDr. Henning Döscher TU Ilmenau Institut für Physik, FG Photovoltaik Ehrenbergstr. 29 98693 Ilmenau Tab Content 6Author Website:Countries AvailableAll regions |
||||
