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OverviewFull Product DetailsAuthor: Stephen J. Pearton , Cammy R. Abernathy , Fan RenPublisher: Springer London Ltd Imprint: Springer London Ltd Edition: 2006 ed. Dimensions: Width: 15.50cm , Height: 2.20cm , Length: 23.50cm Weight: 0.745kg ISBN: 9781852339357ISBN 10: 1852339357 Pages: 380 Publication Date: 24 February 2006 Audience: Professional and scholarly , Professional & Vocational Format: Hardback Publisher's Status: Active Availability: Out of stock  The supplier is temporarily out of stock of this item. It will be ordered for you on backorder and shipped when it becomes available. Table of ContentsAdvanced Processing of Gallium Nitride for Electronic Devices.- Dry Etching of Gallium Nitride and Related Materials.- Design and Fabrication of Gallium High-Power Rectifiers.- Chemical, Gas, Biological, and Pressure Sensing.- Nitride-Based Spintronics.- Novel Insulators for Gallium Nitride Metal-Oxide Semiconductor Field Effect Transistors and AlGaN-GaN Metal-Oxide Semiconductor High Electron Mobility Transistors.ReviewsAuthor InformationStephen J Pearton and Cammy R. Abernathy are full professors in the Department of Materials Science and Engineering at the University of Florida, Gainesville. They are both leaders of research groups working in the processing and characterisation of semiconductor materials for high-speed device applications. Fan Ren is a full professor in the university's Department of Chemical Engineering, specialising in research into devices based on GaN wide-bandgap semiconductor materials. Tab Content 6Author Website:Countries AvailableAll regions |
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