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OverviewFull Product DetailsAuthor: Albert G. Baca (Sandia National Laboratories, New Mexico, USA) , Carol I.H. Ashby (Sandia National Laboratories, New Mexico, USA)Publisher: Institution of Engineering and Technology Imprint: Institution of Engineering and Technology Edition: illustrated edition Dimensions: Width: 18.90cm , Height: 2.50cm , Length: 24.60cm Weight: 0.862kg ISBN: 9780863413537ISBN 10: 0863413536 Pages: 368 Publication Date: 10 June 2005 Audience: College/higher education , Professional and scholarly , Tertiary & Higher Education , Professional & Vocational Format: Hardback Publisher's Status: Active Availability: In Print  This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us. Table of ContentsChapter 1: Introduction to GaAs devices Chapter 2: Semiconductor properties, growth, characterisation and processing techniques Chapter 3: Cleaning and passivation of GaAs and related alloys Chapter 4: Wet etching and photolithography of GaAs and related alloys Chapter 5: Dry etching of GaAs and related alloys Chapter 6: Ohmic contacts Chapter 7: Schottky contacts Chapter 8: Field effect transistors Chapter 9: Heterojunction bipolar transistors Chapter 10: Wet oxidation for optoelectronic and MIS GaAs devicesReviewsAuthor InformationAlbert Baca has a B.S in chemistry and mathematics from the University of New Mexico and a Ph.D. in chemistry from the University of California. He has conducted research and published a wide range of compound semiconductor devices and processes. He has worked on GaAs FET technology in the past. Carol Ashby has a B.S in chemistry from teh University of Idaho and Ph.D in inorganic chemistry from the University of Illinois. She has conducted research and published on a wide range of semicondutor material topics. Her work has ranged from fundamental materials studies to actual fabrication of real devices. Tab Content 6Author Website:Countries AvailableAll regions |
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