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OverviewFundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book. Full Product DetailsAuthor: Amit ChaudhryPublisher: Springer-Verlag New York Inc. Imprint: Springer-Verlag New York Inc. Edition: 2013 ed. Dimensions: Width: 15.50cm , Height: 1.80cm , Length: 23.50cm Weight: 4.498kg ISBN: 9781461468219ISBN 10: 1461468213 Pages: 201 Publication Date: 23 April 2013 Audience: College/higher education , Professional and scholarly , Postgraduate, Research & Scholarly , Professional & Vocational Format: Hardback Publisher's Status: Active Availability: Manufactured on demand We will order this item for you from a manufactured on demand supplier. Table of ContentsReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |