Fundamentals of Nanoscaled Field Effect Transistors
Author:   Amit Chaudhry
Publisher:   Springer-Verlag New York Inc.
Edition:   Softcover reprint of the original 1st ed. 2013
ISBN:  

9781493944828


Pages:   201
Publication Date:   23 August 2016
Format:   Paperback
Availability:   Manufactured on demand   Availability explained
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Fundamentals of Nanoscaled Field Effect Transistors


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Author:   Amit Chaudhry
Publisher:   Springer-Verlag New York Inc.
Imprint:   Springer-Verlag New York Inc.
Edition:   Softcover reprint of the original 1st ed. 2013
Dimensions:   Width: 15.50cm , Height: 1.20cm , Length: 23.50cm
Weight:   3.343kg
ISBN:  

9781493944828


ISBN 10:   1493944827
Pages:   201
Publication Date:   23 August 2016
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   Manufactured on demand   Availability explained
We will order this item for you from a manufactured on demand supplier.

Table of Contents

Scaling of a MOS Transistor.- Nanoscale Effects- Gate Oxide Leakage Currents.- Nanoscale Effects- Inversion Layer Quantization.- Dielectrics for Nanoelectronics.- Germanium Technology.- Biaxial s-Si Technology.- Uniaxial s-Si Technology.- Alternate MOS Structures.- Graphene Technology.

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