Frontiers in Nanoscale Science of Micron/Submicron Devices

Author:   A.-P. Jauho ,  Eugenia V. Buzaneva
Publisher:   Springer
Edition:   1996 ed.
Volume:   328
ISBN:  

9780792343011


Pages:   554
Publication Date:   31 October 1996
Format:   Hardback
Availability:   In Print   Availability explained
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Frontiers in Nanoscale Science of Micron/Submicron Devices


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Overview

The topics covered in this text can be divided into the following main categories: (i) basic science - transport phenomena, optical properties, electronic structure, precision measurements; (ii) device modelling - Schottky contacts, quantum tunnelling structures; (iii) technology and materials science - submicron technology, dislocations, industrial applications of nanoparticles; (iv) characterization - photoemission, XAFS, tunnelling/scanning/atomic force microscopic techniques; and (v) new structures (laser-assisted microfabrication, epitaxy, self-organised growth. The lectures start at the standard textbook level and reach out to cover the latest achievements, allowing both the interested graduate student and the seasoned professional to gain an idea of the way nanoscience is developing.

Full Product Details

Author:   A.-P. Jauho ,  Eugenia V. Buzaneva
Publisher:   Springer
Imprint:   Springer
Edition:   1996 ed.
Volume:   328
Dimensions:   Width: 15.50cm , Height: 3.10cm , Length: 23.50cm
Weight:   2.160kg
ISBN:  

9780792343011


ISBN 10:   0792343018
Pages:   554
Publication Date:   31 October 1996
Audience:   College/higher education ,  Professional and scholarly ,  General/trade ,  Postgraduate, Research & Scholarly ,  Professional & Vocational
Format:   Hardback
Publisher's Status:   Active
Availability:   In Print   Availability explained
This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us.

Table of Contents

I. Nanotechnologies.- Submicron Technology.- Ultra Fine Particles and Coatings.- 3-D Patterned III-V Semicondutor Devices Using High Energy In-Situ Focused Ion Beam Lithography and MBE.- Real Time 3-D Patterned Crystal Growth of GaAs Using a Low Energy Focused Ion Beam and Molecular Beam Epitaxy.- Mesoscopic Structure-Formation and Quantum Properties of Heteroepitaxy of InAs/GaAs.- Van der Waals Epitaxy of Transition Metal Dichalcogenides Using Metal Organic Precursors (MOVDWE).- Thin Film Epitaxial Growth by Laser Ablation.- Nanostructuring of Silicon by Laser Direct Writing.- Si(001) Surface Passivation caused by Bi Adsorption.- II. Characterization.- Applications of Scanning Force Microscopy.- An Elliptically Polarized Synchrotron Radiation Beam Line and Its Applications.- The Potential of Electron Spectroscopy and Scanning Tunnelling Microscopy for the Study of Semiconducting Nanostructures.- Optical Characterization of Surfaces at IR and VIS Energies.- Optical Techniques for Probing Semiconductor Surfaces and Interfaces.- Nanoscale Characterization of Interfaces in Micron/Submicron Structures.- III. Fundamental Properties of Micro/Nanostructures.- Electron Interference at III-V Heterointerfaces: Physics and Devices.- Non-Equilibrium Mesoscopic Physics: Microwave-Induced Coherent Transport in Two-Dimensional Semiconductor Microstructures.- Influence of Fluctuations of Widths of Single Quantum Wells on Photoluminescence Properties in Metallo-Organic Compounds of Hydride Epitaxial GaAs / ALxGa1-xAs Heterostructures.- Accurate Modeling of Double Barrier Resonant Tunneling Diodes.- Mechanisms of the Tunnel Current Formation in Double Barrier Resonant Tunneling Structures.- Quantum Well Structures Based on the Layered Compounds InSe and GaSe Grown by Van der Waals Epitaxy.- Frequency Properties of Planer Microwave Detector.- Noise in Silicon Structures with Bicrystallites.- Fundamental Properties and Nanoscale Aspects of Schottky Barriers.- Size Effects in Properties of Metal-Semiconductor Structures with Schottky Barriers.- New Terminations for Planar Schottky Structure (PSS).- Metal (Cr, Mo, W)-GaAs Contacts.- Dislocation Displacement in Silicon Structures.- Effect of Substrate Defects in the Luminescent Properties of Porous Silicon Layers.- On the Kinematics of Amorphization under Ion Implantation.- IV. Basic Physics of Novel Nanostructures.- Lateral Superlattices: Classical, Semi-Classical, and Quantum Mechanical Transport Phenomena.- Transport Studies in Semiconductor Heterostructures.- Equilibrium and Nonequilibrium Optical Effects in Semiconductor Heterostructures.- Observation of Scaling Behavior in a Coulomb Blockade System.- Dynamic Quantum Wells and Quantum Dots in MIS-Microstructure with Periodic Field Electrodes.- Disordered Superlattices.- Si/Ge Superlattices: A Step Towards Si-Based Optoelectronics.- Low Frequency Admittance of Quantized Hall Conductors.- Screening in Two-Dimensional Electron Liquid.- Dielectric Function of Matrix Disperse Systems with Nanoscale Conducting Inclusions Exhibiting Quantum Size Properties.- Photograph.- List of Participants.

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