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OverviewThis book consists of four chapters to address at different modeling levels for different nanoscale MOS structures (Single- and Multi-Gate MOSFETs). The collection of these chapters in the book are attempted to provide a comprehensive coverage on the different levels of electrostatics and transport modeling for these devices, and relationships between them. In particular, the issue of quantum transport approaches, analytical predictive 2D/3D modeling and design-oriented compact modeling. It should be of interests to researchers working on modeling at any level, to provide them with a clear explanation of theapproaches used and the links with modeling techniques for either higher or lower levels. Full Product DetailsAuthor: Benjamin Iniguez (Univ Rovira I Virgili, Spain) , Tor A Fjeldly (Norwegian Univ Of Science & Technology, Norway)Publisher: World Scientific Publishing Co Pte Ltd Imprint: World Scientific Publishing Co Pte Ltd Volume: 54 Dimensions: Width: 16.70cm , Height: 1.90cm , Length: 25.20cm Weight: 0.594kg ISBN: 9789814583183ISBN 10: 9814583189 Pages: 204 Publication Date: 21 March 2014 Audience: College/higher education , Postgraduate, Research & Scholarly Format: Hardback Publisher's Status: Active Availability: Out of stock  The supplier is temporarily out of stock of this item. It will be ordered for you on backorder and shipped when it becomes available. Table of ContentsReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |
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