From Contamination to Defects, Faults and Yield Loss: Simulation and Applications

Author:   Jitendra B. Khare ,  Wojciech Maly
Publisher:   Springer-Verlag New York Inc.
Edition:   Softcover reprint of the original 1st ed. 1996
Volume:   5
ISBN:  

9781461285953


Pages:   150
Publication Date:   26 September 2011
Format:   Paperback
Availability:   Manufactured on demand   Availability explained
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From Contamination to Defects, Faults and Yield Loss: Simulation and Applications


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Overview

Over the years there has been a large increase in the functionality available on a single integrated circuit. This has been mainly achieved by a continuous drive towards smaller feature sizes, larger dies, and better packing efficiency. However, this greater functionality has also resulted in substantial increases in the capital investment needed to build fabrication facilities. Given such a high level of investment, it is critical for IC manufacturers to reduce manufacturing costs and get a better return on their investment. The most obvious method of reducing the manufacturing cost per die is to improve manufacturing yield. Modern VLSI research and engineering (which includes design manufacturing and testing) encompasses a very broad range of disciplines such as chemistry, physics, material science, circuit design, mathematics and computer science. Due to this diversity, the VLSI arena has become fractured into a number of separate sub-domains with little or no interaction between them. This is the case with the relationships between testing and manufacturing. From Contamination to Defects, Faults and Yield Loss: Simulation and Applications focuses on the core of the interface between manufacturing and testing, i.e., the contamination-defect-fault relationship. The understanding of this relationship can lead to better solutions of many manufacturing and testing problems. Failure mechanism models are developed and presented which can be used to accurately estimate probability of different failures for a given IC. This information is critical in solving key yield-related applications such as failure analysis, fault modeling and design manufacturing.

Full Product Details

Author:   Jitendra B. Khare ,  Wojciech Maly
Publisher:   Springer-Verlag New York Inc.
Imprint:   Springer-Verlag New York Inc.
Edition:   Softcover reprint of the original 1st ed. 1996
Volume:   5
Dimensions:   Width: 15.50cm , Height: 0.90cm , Length: 23.50cm
Weight:   0.272kg
ISBN:  

9781461285953


ISBN 10:   146128595
Pages:   150
Publication Date:   26 September 2011
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   Manufactured on demand   Availability explained
We will order this item for you from a manufactured on demand supplier.

Table of Contents

1. Introduction.- 1.1 Trends in IC Manufacturing.- 1.2 Yield Loss Mechanisms in ICs.- 1.3 Functional Yield Estimation.- 1.4 Research Goals.- 1.5 Outline.- 1.6 References.- 2. Background.- 2.1 Terminology.- 2.2 Point Model.- 2.3 Disk Model.- 2.4 Experimental Investigation of the Disk Model.- 2.5 Summary.- 2.6 References.- 3. Contamination-Defect-Fault (CDF) Simulation.- 3.1 New Contamination Model.- 3.2 Contamination-Defect-Fault (CDF) Simulation.- 3.3 References.- 4. CDF Mapper CODEF.- 4.1 CODEF - An Overview.- 4.2 Chip Data Base (CDB).- 4.3 Process Models.- 4.4 Circuit Extraction.- 4.5 Netlist Comparison.- 4.6 CODEF - Illustration.- 4.7 Runtime and Memory Usage.- 4.8 References.- 5. CODEF - Applications.- 5.1 Yield Estimation.- 5.2 Fault Modeling.- 5.3 Failure Analysis.- 5.4 References.- 6. Possible Extensions.- 6.1 CODEF Speed and Memory Considerations.- 6.2 Addition of New Process Models.- 6.3 Additional Contamination Properties.- 6.4 Extraction of Bipolar Transistors.- 6.5 Identification of Contamination Parameters.- 6.6 References.- 7. Conclusion.- Appendix A: CMOS Process Flow.

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