Ferroelectric Memories

Author:   James F. Scott
Publisher:   Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
Edition:   Softcover reprint of hardcover 1st ed. 2000
Volume:   3
ISBN:  

9783642085659


Pages:   248
Publication Date:   15 December 2010
Format:   Paperback
Availability:   In Print   Availability explained
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Ferroelectric Memories


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Overview

Ferroelectric memories have changed in 10 short years from academic curiosities of the university research labs to commercial devices in large-scale production. This is the first text on ferroelectric memories that is not just an edited collection of papers by different authors. Intended for applied physicists, electrical engineers, materials scientists and ceramists, it includes ferroelectric fundamentals, especially for thin films, circuit diagrams and processsing chapters, but emphazises device physics. Breakdown mechanisms, switching kinetics and leakage current mechanisms have lengthly chapters devoted to them. The book will be welcomed by research scientists in industry and government laboratories and in universities. It also contains 76 problems for students, making it particularly useful as a textbook for fourth-year undergraduate or first-year graduate students.

Full Product Details

Author:   James F. Scott
Publisher:   Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
Imprint:   Springer-Verlag Berlin and Heidelberg GmbH & Co. K
Edition:   Softcover reprint of hardcover 1st ed. 2000
Volume:   3
Dimensions:   Width: 15.50cm , Height: 1.40cm , Length: 23.50cm
Weight:   0.454kg
ISBN:  

9783642085659


ISBN 10:   3642085652
Pages:   248
Publication Date:   15 December 2010
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   In Print   Availability explained
This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us.

Table of Contents

1. Introduction.- 2. Basic Properties of RAMs (Random Access Memories).- 3. Electrical Breakdown (DRAMs and NV-RAMs).- 4. Leakage Currents.- 5. Capacitance—Voltage Data: C(V).- 6. Switching Kinetics.- 7. Charge Injection and Fatigue.- 8. Frequency Dependence.- 9. Phase Sequences in Processing.- 10. SBT-Family Aurivillius-Phase Layer Structures.- 11. Deposition and Processing.- 12. Nondestructive Read-Out Devices.- 13. Ferroelectrics-on-Superconductor Devices: Phased-Array Radar and 10–100 GHz Devices.- 14. Wafer Bonding.- 15. Electron-Emission and Flat-Panel Displays.- 16. Optical Devices.- 17. Nanophase Devices.- 18. Drawbacks and Disadvantages.- A. Exercises.

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