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OverviewAlmost all semiconductor devices contain metal-semiconductor, insulator-semiconductor, insulator-metal and/or semiconductor-semiconductor interfaces; and their electronic properties determine the device characteristics. This is the first monograph that treats the electronic properties of all different types of semiconductor interfaces. Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Monch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling�s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively. Full Product DetailsAuthor: Winfried MönchPublisher: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG Imprint: Springer-Verlag Berlin and Heidelberg GmbH & Co. K Edition: 2004 ed. Volume: 43 Dimensions: Width: 15.50cm , Height: 1.70cm , Length: 23.50cm Weight: 1.260kg ISBN: 9783540202158ISBN 10: 3540202153 Pages: 264 Publication Date: 14 January 2004 Audience: College/higher education , Professional and scholarly , Undergraduate , Postgraduate, Research & Scholarly Format: Hardback Publisher's Status: Active Availability: In Print  This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us. Table of Contents1. Introduction.- 2. Depletion Layer.- 3. Determination of Barrier Heights and Offsets.- 4. Laterally Inhomogeneous Schottky Contacts.- 5. The IFIGS-and-Electronegativity Theory.- 6. The MIGS-and-Electronegativity Concept: Experiment and Theory.- 7. First-Principles Calculations of Barrier Heights and Valence-Band Offsets.- 8. Temperature and Pressure Effects.- 9. Barrier Heights and Extrinsic Interface Defects.- 10. Extrinsic Interface Dipoles.- 11. Ohmic Contacts.- References.ReviewsFrom the reviews: <p> This is the first monograph that treats the electronic properties of all different types of semiconductor interfaces. a ] The originality of MAnch is more in the fact that he uses the interface-induced gap stats (IFIGS) as the unifying concept of his book. a ] Altogether, the present book will be very helpful for theorists in the field of semiconductor interface science. (Michel Wautelet, Physicalia, Vol. 28 (4-6), 2006) From the reviews: This is the first monograph that treats the electronic properties of all different types of semiconductor interfaces. ... The originality of Monch is more in the fact that he uses the interface-induced gap stats (IFIGS) as the unifying concept of his book. ... Altogether, the present book will be very helpful for theorists in the field of semiconductor interface science. (Michel Wautelet, Physicalia, Vol. 28 (4-6), 2006) Author InformationTab Content 6Author Website:Countries AvailableAll regions |
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