Doping in III-V Semiconductors

Author:   E. F. Schubert (AT&T Bell Laboratories, New Jersey)
Publisher:   Cambridge University Press
Volume:   1
ISBN:  

9780511599828


Publication Date:   05 October 2010
Format:   Undefined
Availability:   In stock   Availability explained
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Doping in III-V Semiconductors


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Overview

This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes in detail all the various techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III–V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, auto-compensation and maximum attainable dopant concentration. The timely topic of highly doped semiconductors is discussed as well. Technologically important deep levels are summarized. The properties of deep levels are presented phenomenologically. The final chapter is dedicated to the experimental characterization of impurities.

Full Product Details

Author:   E. F. Schubert (AT&T Bell Laboratories, New Jersey)
Publisher:   Cambridge University Press
Imprint:   Cambridge University Press (Virtual Publishing)
Volume:   1
ISBN:  

9780511599828


ISBN 10:   051159982
Publication Date:   05 October 2010
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Undefined
Publisher's Status:   Active
Availability:   In stock   Availability explained
We have confirmation that this item is in stock with the supplier. It will be ordered in for you and dispatched immediately.

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Fred Schubert has written a book that very nicely fills two roles: It serves as a reference volume for those of us who use III-V materials, and it provides enlightening explanations of interesting and important problems in semi-conductor physics...His lucid explanations of some of the important physics of doped semiconductors is a major strength. David L. Miller, Physics Today


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