Overview

Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed.

Full Product Details

Author:   B. J. Pawlak ,  M. L. Pelaz (Universidad de Valladolid, Spain) ,  M. Law (University of Florida) ,  K. Surugo
Publisher:   Cambridge University Press
Imprint:   Cambridge University Press
Dimensions:   Width: 15.20cm , Height: 1.80cm , Length: 22.90cm
Weight:   0.450kg
ISBN:  

9781107408548

ISBN 10:   1107408547
Pages:   336
Publication Date:   05 June 2014
Audience:   College/higher education ,  Professional and scholarly ,  Postgraduate, Research & Scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   Manufactured on demand  
We will order this item for you from a manufactured on demand supplier.

Table of Contents

Reviews

Author Information

Tab Content 6

Author Website:  

Customer Reviews

Recent Reviews

No review item found!

Add your own review!

Countries Available

All regions