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Overview"SiC and GaN devices have been around for some time. The first dedicated international conference on SiC and related devices, ""ICSCRM,"" was held in Washington, DC, in 1987. But only recently, the commercialization of SiC and GaN devices has happened. Due to its material properties, Si as a semiconductor has limitations in high-temperature, high-voltage, and high-frequency regimes. With the help of SiC and GaN devices, it is possible to realize more efficient power systems. Devices manufactured from SiC and GaN have already been impacting different areas with their ability to outperform Si devices. Some of the examples are the telecommunications, automotive/locomotive, power, and renewable energy industries. To achieve the carbon emission targets set by different countries, it is inevitable to use these new technologies. This book attempts to cover all the important facets related to wide bandgap semiconductor technology, including new challenges posed by it. This book is intended for graduate students, researchers, engineers, and technology experts who have been working in the exciting fields of SiC and GaN power devices." Full Product DetailsAuthor: Yogesh Kumar SharmaPublisher: IntechOpen Imprint: IntechOpen ISBN: 9781789236682ISBN 10: 1789236681 Pages: 152 Publication Date: 12 September 2018 Audience: Professional and scholarly , Professional & Vocational Format: Hardback Publisher's Status: Active Availability: Manufactured on demand  We will order this item for you from a manufactured on demand supplier. Table of ContentsReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |
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