Overview

This book describes in detail the semiconductor physics and the effects of the high temperatures and ionizing radiations in the electrical behavior of the Metal-OxideSemiconductor Field Effect Transistors (MOSFETs), implemented with the first and second generations of the differentiated layout styles. The authors demonstrate a variety of innovative layout styles for MOSFETs, enabling readers to design analog and RF MOSFETs that operate in a high-temperature wide range and an ionizing radiation environment with high electrical performance and reduced die area.

Full Product Details

Author:   Salvador Pinillos Gimenez ,  Egon Henrique Salerno Galembeck
Publisher:   Springer International Publishing AG
Imprint:   Springer International Publishing AG
Edition:   1st ed. 2023
Weight:   0.506kg
ISBN:  

9783031290855

ISBN 10:   3031290852
Pages:   216
Publication Date:   06 May 2023
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Hardback
Publisher's Status:   Active
Availability:   Manufactured on demand  
We will order this item for you from a manufactured on demand supplier.

Table of Contents

Chapter 1. Introduction.- Chapter 2. Basic concepts of the semiconductor physics.- Chapter 3. The electrical characteristics of the semiconductor at high temperatures.- Chapter 4. The MOSFET.- Chapter 5. The First Generation of the Unconventional     Layout     Styles     for MOSFETs.- Chapter 6. The Ionizing Radiations Effects in Electrical Parameters and Figures of Merit of MOSFETs.- Chapter 7. The Ionizing Radiations Effects in Electrical Parameters and Figures of Merit of MOSFETs.- Chapter 8. The High Temperature Effects in Electrical Parameters of Mosfets and the Results Obtained of the First and Second Generation.

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Author Information

Salvador Pinillos Gimenez is a Full Professor at the Department of Electrical Engineering, Centro Universitário FEI (FEI-SP) and MTG2i Solutions Co., São Paulo, Brazil.  In 1984, he received his B.Sc. degree in Electronic Engineering from UMC, São Paulo, Brazil.  He obtained the M.Sc. degree in Electrical Engineering from Microelectronic Lab. of São Paulo University (LME/EPUSP) in 1990.  In October 2004, he obtained the Ph.D. degree in Microelectronics. His general interests are in new MOSFETs, FinFETs, power devices, design and optimization of analog and radiofrequency CMOS ICs by using computational tools based on Artificial Inteligence (iMTGSPICE) and parallel digital processing. Egon Henrique Salerno Galembeck is a researcher at MTG2i Solutions Co. in the research lines of design and optimization of analog and radio frequency CMOS ICs, electrical characterization of transistors in harsh environment and three-dimensional numerical simulation of MOS devices. In2013, he received the electrical engineering degree from Centro Universitário FEI, São Paulo, Brazil. He obtained the M. Sc. degree in Electrical Engineering in the area of ​​Integrated Electronic Devices from Centro Universitário FEI, in September 2015. He received his Ph.D. degree in Electrical Engineering in the area of Nanoelectronics and Integrated Devices from Centro Universitário FEI, São Paulo, Brazil, in 2022.

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