Free Delivery Over $100
|
|
|||
|
||||
OverviewThis book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications. Full Product DetailsAuthor: Iraj Sadegh Amiri , Hossein Mohammadi , Mahdiar HosseinghadiryPublisher: Springer Nature Switzerland AG Imprint: Springer Nature Switzerland AG Edition: 1st ed. 2019 Weight: 0.454kg ISBN: 9783030045128ISBN 10: 3030045129 Pages: 122 Publication Date: 20 February 2019 Audience: Professional and scholarly , Professional & Vocational Format: Hardback Publisher's Status: Active Availability: Manufactured on demand  We will order this item for you from a manufactured on demand supplier. Table of ContentsChapter 1. Invention and Evaluation of Transistors and Integrated Circuits.- Chapter 2. General overview of the basic structure and operation of a typical silicon on insulator metal-semiconductor field effect transistor SOI-MESFET .- Chapter 3. Modeling of Classical SOI-MESFET.- Chapter 4. Design and modeling of triple-material gate SOI-MESFET.- Chapter 5. Three-dimensional analytical model of the non-classical three-gate SOI-MESFET .- Chapter 6. Analytical investigation of subthreshold performance of SOI-MESFET devices.- Chapter 7. Future works on Silicon-on-insulator metal semiconductor field effect transistors (SOI-MESFETs).ReviewsAuthor InformationIraj Sadegh Amiri received his B. Sc (Applied Physics) from Public University of Oroumiyeh, Iran in 2001 and a gold medalist M. Sc. (Physics/Optics)) from University Technology Malaysia (UTM), in 2009. He was awarded a PhD degree in Physics (photonics) in Jan 2014. He has been doing research on several topics such as the optical soliton communications, laser physics, plasmonics photonics devices, nonlinear fiber optics, optoelectronics devices using 2D materials, waveguides, quantum cryptography and nanotechnology engineering. Hossein Mohammadi was born in Shiraz, Iran, in September 1974. He received the B.Sc. degree from IAU, Dezful, Iran, in 1999, the M.Sc. degree from IAU, Arak, Iran, in 2007, and Ph.D. degree from national university of Malaysia in 2017 all in electrical engineering. He is currently lecturer of Shiraz Pasargad higher education institute in Iran. His research interests include micro and Nano electronics, compact modeling of MOSFET’s and SOI-MESFET’s. Mahdiar Hosseinghadiry: His research includes VLSI modelling and design especially low power high speed circuits, nano-fabrication, graphene transistor modelling, and laser physics. He has published more than 50 ISI paper so far and he is currently doing research at department of innovation, Allseas Eng., Netherlands. Tab Content 6Author Website:Countries AvailableAll regions |
||||
