Overview

The text begins by discussing bulk silicon and SOI MOSFETs. The electronic transport in the inversion layer, the influence of impurity freeze-out, the special electrical properties of SOI structures, the device reliability and the interest of a low temperature operation for the ultimate integration of silicon down to nanometer dimensions are described. The next two chapters deal with Silicon-Germanium and III-V Heterojunction Bipolar Transistors, as well as III-V High Electron Mobility Transistors (HEMT). The physical effects in III-V semiconductors at low temperature, the HEMT and HBT static, high frequency and noise properties, and the comparison of various cooled III-V devices are also addressed. The next chapter treats quantum effect devices made of silicon materials. The major quantum effects at low temperature, quantum wires, quantum dots as well as single electron devices and applications are investigated and the last chapter overviews the performances of cryogenic circuits and their applications.

Full Product Details

Author:   Francis Balestra ,  G. Ghibaudo ,  Francis Balestra ,  Gerard Ghibaudo
Publisher:   Springer
Imprint:   Springer
Edition:   2001 ed.
Dimensions:   Width: 15.50cm , Height: 1.70cm , Length: 23.50cm
Weight:   1.250kg
ISBN:  

9780792373773

ISBN 10:   0792373774
Pages:   262
Publication Date:   31 May 2001
Audience:   College/higher education ,  Professional and scholarly ,  Postgraduate, Research & Scholarly ,  Professional & Vocational
Format:   Hardback
Publisher's Status:   Active
Availability:   In Print  
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Table of Contents

1. General Introduction.- 2. Device physics and electrical performance of bulk Silicon MOSFETs.- 3. SOI MOSFETs.- 4. Silion-Germanium heterojunction bipolar transistor.- 5. Heterojunction transistors at low temperature.- 6. Quantum effects and devices.- 7. Circuits and applications.

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