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Author:   J. Giber ,  F. Beleznay ,  I. C. Szep ,  J. Laszlo
Publisher:   Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
Imprint:   Springer-Verlag Berlin and Heidelberg GmbH & Co. K
Volume:   175
Dimensions:   Width: 17.00cm , Height: 1.70cm , Length: 24.40cm
Weight:   0.628kg
ISBN:  

9783540119869

ISBN 10:   3540119868
Pages:   311
Publication Date:   01 February 1983
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   Out of stock  
The supplier is temporarily out of stock of this item. It will be ordered for you on backorder and shipped when it becomes available.

Table of Contents

A technologist's view on defects.- Characterization of impurities and defects by electron paramagnetic resonance and related techniques.- Review of the possibilities of electron microscopy in the identification of defect structures.- Electrical and optical measuring techniques for flaw states.- Theory of defect complexes.- Critical comparison of the theoretical models for anomalous large lattice relaxation in III-V compounds.- Vacancy related structure defects in SiO2 - Cyclic cluster calculations compared with experimental results.- A new model for the Si-A center.- Defect complexing in iron-doped silicon.- Photoluminescence of defect complexes in silicon.- Electron microscopical analysis of the stacking fault behaviour in inert-gas annealed Czochralski silicon.- Oxygen precipitation and the generation of secondary defects in oxygen-rich silicon.- Electrical and optical properties of oxygen-related donors in silicon formed at temperatures from 600 to 850 Degreesc.- On the field dependence of capture and emission processes at deep centres.- Lattice matched heterolayers.- Compositional transition layers in heterostructure.- Defect complexes in III-V compounds.- Low frequency current oscillations due to electron retrapping by the AsGa antisite defect in GaAs.- Main electron traps in gaas: Aggregates of antisite defects.- Defect reactions in gap caused by zinc diffusion.- Nonstatistical defect surroundings in mixed crystals - the selfactivated luminescence centre in ZnSxSe1-x.- Structure and properties of the Si-SiO2 interregion.- Radiation defects of the semiconductor-insulator interface.- Analysis of Si/SiO2 interface defects by the method of term spectroscopy.- Theoretical aspects of laser annealing.- Radiation methods for creation of heterostructures on silicon.- Ion beam gettering in GaP.- Panel discussion.- Mechanical stress induced defect creation in GaP.

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