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OverviewFull Product DetailsAuthor: Hans J. Scheel , Peter Capper , Peter RudolphPublisher: Wiley-VCH Verlag GmbH Imprint: Wiley-VCH Verlag GmbH Dimensions: Width: 17.70cm , Height: 2.50cm , Length: 24.50cm Weight: 0.920kg ISBN: 9783527325931ISBN 10: 352732593 Pages: 366 Publication Date: 25 August 2010 Audience: Professional and scholarly , Professional & Vocational Format: Hardback Publisher's Status: Active Availability: In stock  We have confirmation that this item is in stock with the supplier. It will be ordered in for you and dispatched immediately. Table of ContentsPreface PART I: Basic Concepts in Crystal Growth Technology THERMODYNAMIC MODELING OF CRYSTAL-GROWTH PROCESSES Introduction General Approach of Thermodynamic Modeling Crystal Growth in the System Si-C-O-Ar (Example 1) Crystal Growth of Carbon-Doped GaAs (Example 2) Summary and Conclusions MODELING OF VAPOR-PHASE GROWTH OF SiC AND AlN BULK CRYSTALS Introduction Model Description Results and Discussions Conclusions ADVANCED TECHNOLOGIES OF CRYSTAL GROWTH FROM MELT USING VIBRATIONAL INFLUENCE Introduction Axial Vibrational Control in Crystal Growth AVC-Assisted Czochralski Method AVC-Assisted Bridgman Method AVC-Assisted Floating Zone Method Conclusions PART II: Semiconductors NUMERICAL ANALYSIS OF SELECTED PROCESSES IN DIRECTIONAL SOLIDIFICATION OF SILICON FOR PHOTOVOLTAICS Introduction Directional Solidification Method Crystallization Process Impurity Incorporation in Crystals Summary CHARACTERIZATION AND CONTROL OF DEFECTS IN VCz GaAs CRYSTALS GROWN WITHOUT B2O3 ENCAPSULANT Introduction Retrospection Crystal Growth Without B2O3 Encapsulant Inclusions, Precipitates and Dislocations Residual Impurities and Special Defect Studies Electrical and Optical Properties in SI GaAs Boron in SC GaAs Outlook on TMF-VCz Conclusions THE GROWTH OF SEMICONDUCTOR CRYSTALS (Ge, GaAs) BY THE COMBINED HEATER MAGNET TECHNOLOGY Introduction Selected Fundamentsals TMF Generation in Heater-Magnet Modules The HMM Design Numerical Measurements Growth Results under TMF Conclusions and Outlook MANUFACTURING OF BULK AlN SUBSTRATES Introduction Modeling Experiment Results and Discussion Conclusions INTERACTIONS OF DISLOCATIONS DURING EPITAXIAL GROWTH OF SiC AND GaN Introduction Classification, Nomenclature and Characterization of Dislocations in SiC and GaN Conversion of Basal Plane Dislocations During SiC Epitaxy Reduction of Dislocations During Homoepitaxy of GaN Conclusions LOW-TEMPERATURE GROWTH OF TERNARY III-V SEMICONDUCTOR CRYSTALS FROM ANTIMONIDE-BASED QUATERNARY MELTS Introduction Crystal Growth from Quaternary Melts Synthesis and Bulk Crystal Growth Conclusion MERCURY CADMIUM TELLURIDE (MCT) GROWTH TECHNOLOGY USING ACRT AND LPE Introduction Bridgman/ACRT Growth of MCT Liquid Phase Epitaxy of MCT THE USE OF A PLATINUM TUBE AS AN AMPOULE SUPPORT IN THE BRIDGMAN GROWTH OF BULK CZT CRYSTALS Introduction The Importance of the Solid/Liquid Interface Approaches for Crystal Growth Using Ampoule Support Results and Discussions Conclusions PART III: Dielectrics MODELING AND OPTIMIZATION OF OXIDE CRYSTAL GROWTH Introduction Radiative Heat Transfer (RHT) Numerical Model Results and Discussion Conclusions ADVANCED MATERIAL DEVELOPMENT FOR INERTIAL FUSION ENERGY (IFE) Introduction Production of Nd:Phosphate Laser Glass and KDP Frequency-Conversion Crystals Yb:S-FAP Crystals YCOB Crystals Advanced Material Concepts for Power-Plant Designs Summary MAGNETO-OPTIC GARNET SENSOR FILMS: PREPARATION, CHARACTERIZATION, APPLICATION Introduction Bi-Substituted Garnets LPE Deposition and Topological Film Properties Applications Conclusions GROWTH TECHNOLOGY AND LASER PROPERTIES OF Yb-DOPED SESQUIOXIDES Introduction Structure and Physical Properties Crystal Growth Spectroscopic Characterization Laser Experiments Summary and Outlook CONTINUOUS GROWTH OF ALKALI-HALIDES: PHYSICS AND TECHNOLOGY Modern Requirements to Large Alkali-Halide Crystals Conditions of Steady-State Crystallization in Conventional Melt-Growth Methods and in Their Modifications Macrodefect Formation in AHC Dynamics of Thermal Conditions during Continuous Growth Advanced Growth-Control Algorithms Summary TRENDS IN SCINTILLATION CRYSTALS Introduction Novel Scintillation Materials Scintillation Detectors for Image Visualization and Growth Techniques for Scintillation Crystals High Spatial Resolution Scintillation Detectors Conclusions PART IV: Crystal Machining CRYSTAL MACHINING USING ATMOSPHERIC PRESSURE PLASMA Introduction Plasma Chemical Vaporization Machining (PCVM) Numerically Controlled Sacrificial Oxidation ConclusionsReviewsEdited by the organizers of the International Workshop on Crystal Growth Technology, this ready reference is essential reading for materials scientists, chemists, physicists, computer hardware manufacturers, engineers, and those working in the chemical and semiconductor industries. (Quote.com, 31 January 2011) <p> Semiconductors and dielectrics are two essential materials found in cell phones and computers, for example, and both are manufactured by growing crystals. (Quote.com, 20 January 2011) Edited by the organizers of the International Workshop on Crystal Growth Technology, this ready reference is essential reading for materials scientists, chemists, physicists, computer hardware manufacturers, engineers, and those working in the chemical and semiconductor industries. (Quote.com, 31 January 2011) <p> Semiconductors and dielectrics are two essential materials found in cell phones and computers, for example, and both are manufactured by growing crystals. (Quote.com, 20 January 2011) Author InformationPeter Capper is a Materials Team Leader at SELEX GALILEO Infrared Ltd (formerly BAE Systems), and has over 30 years of experience in the infrared material mercury cadmium telluride (MCT). He holds the patent for the application of the accelerated crucible rotation technique to Bridgman growth and is recognised as a world authority on MCT. He has authored/co-authored over 100 Journal articles and edited/co-edited/co-written 10 books on electronic materials and devices. He has served on several International Advisory boards to conferences, acted as co-Chair at an E-MRS Symposium (France) and a SPIE Symposium (USA) and has edited/co-edited several conference proceedings for J. Crystal Growth and J. Materials Science. He is also currently on the editorial board of the Journal of Materials Science: Materials in Electronics and is a Series Editor on the Wiley Series `Materials for Electronic and Optoelectronic Appliations?. In 2008 he received an award from the Swiss Crystallographic Society for his bulk growth work. Peter Rudolph is currently the coordinator of the technology department of the Leibniz-Institute for Crystal Growth in Berlin. His present research field is the growth of semiconductor crystals (GaAs, Ge, Si) in magnetic fields. He obtained the PhD in Solid State Physics at the Technical University of Lvov in 1972, and in 1985 the Professor position at the Humboldt University in Berlin. From 1993-94 he was Guest Professor at the Tohoku University in Sendai. He is associate editor of J. Crystal Growth, president of the German Society of Crystal Growth and member of the IOCG executive committee. He is the author of one monograph, more than 200 papers and book chapters, 7 books editions and 33 patent descriptions. He acted as co-chair and advisor of several international conferences and schools. He received innovation prizes in 2001 and 2008. Tab Content 6Author Website:Countries AvailableAll regions |
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