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OverviewFull Product DetailsAuthor: Alfonso Ngan (University of Hong Kong (Hong Kong)) , Alireza Kalaei (University of Hong Kong (Hong Kong))Publisher: Institute of Physics Publishing Imprint: Institute of Physics Publishing ISBN: 9780750363280ISBN 10: 0750363282 Pages: 154 Publication Date: 16 July 2024 Audience: Professional and scholarly , Professional & Vocational Format: Hardback Publisher's Status: Active Availability: In Print  This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us. Table of ContentsCh 1: Introduction: Why need CDD Ch 2: What are dislocation densities? Ch 3: Kinematics of intensive line density: evolution laws and simulation codes Ch 4: Dynamics of intensive line density Ch 5: “All-dislocation density” (ADD) for extensive microstructures - kinematics and dynamics closure Ch 6: Numerical scheme for extensive microstructure simulation Ch 7: Conclusion and PerspectivesReviewsAuthor InformationAlfonso Ngan is Kingboard Professor in Materials Engineering and Chair in Materials Science and Engineering at the University of Hong Kong (HKU). He obtained his PhD from the University of Birmingham, UK in 1992, and carried out postdoctoral research work at the University of Oxford, before joining HKU in 1993. His research interests include nanomechanics, smart actuating materials, and microstructural basis of material properties. He is an editorial board member for the IOP journal Modelling and Simulation in Materials Science and Engineering. Alireza Kalaei is currently pursuing PhD studies at the University of Hong Kong. Prior to this, he completed his undergraduate studies at the Sharif University of Technology in 2020 and finished his MPhil studies at the University of Hong Kong in 2022. His research interests include mechanical properties of materials, microstructural basis of strength, and computational materials science. On the topic of continuous dislocation dynamics, he has made important contributions to the development of numerical schemes and simulation codes. Tab Content 6Author Website:Countries AvailableAll regions |
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