Overview

This volume provides a review of the state-of-the-art in growth, processing and devices from compound semiconductors. Consisting of the proceedings of a topical conference held at the University of Florida, at which speakers from both the US and Japan were present, it discusses critical issues in growth and characterization by semi-insulating bulk crystals, with particular emphasis placed on recent modification of gas sources. It also includes an examination of advantages, limitations and techniques pertaining to chemical vapour deposition.

Full Product Details

Author:   Paul H. Holloway (University of Florida, Gainesville, Florida, USA) ,  Timothy J. Anderson ,  Paul H. Holloway ,  T. J. Anderson
Publisher:   Taylor & Francis Inc
Imprint:   CRC Press Inc
Weight:   0.399kg
ISBN:  

9780849301650

ISBN 10:   0849301653
Pages:   160
Publication Date:   27 December 1989
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Hardback
Publisher's Status:   Out of Print
Availability:   Awaiting stock  

Table of Contents

Introduction. Mass-Producing Technologies for Semi-Insulating GaAs Substrates. Photo-Mombe: A New Epitaxial Growth Technique. Photoassociated Single Molecular Layer Growth. Atomic Layer Epitaxy of III-V Compounds. Passivation of III-V Compound Semiconductors. Understanding and Control of Insulator-Semiconductor Interfaces for Surface Passivation of III-V Compound Semiconductors. Surface-Emitting GaInAsP/InP Diode Lasers Fabricated by Mass Transport. Growth, Characterization, and Device Applications of GaAs on Si. Recent Progress in Quantum Well Lasers in Japan. Quantum Well Heterostructure Lasers. Overview of a Vertical Cavity Surface Emitting Laser. Emphasis on:

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