Complete Guide to Semiconductor Devices

Author:   Kwok K. Ng
Publisher:   John Wiley and Sons Ltd
Edition:   2nd Edition
ISBN:  

9780471202400


Pages:   768
Publication Date:   25 July 2002
Format:   Hardback
Availability:   Out of stock   Availability explained


Our Price $459.36 Quantity:  
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Complete Guide to Semiconductor Devices


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Full Product Details

Author:   Kwok K. Ng
Publisher:   John Wiley and Sons Ltd
Imprint:   John Wiley & Sons Inc
Edition:   2nd Edition
Dimensions:   Width: 16.50cm , Height: 4.00cm , Length: 24.10cm
Weight:   1.196kg
ISBN:  

9780471202400


ISBN 10:   0471202401
Pages:   768
Publication Date:   25 July 2002
Audience:   College/higher education ,  Professional and scholarly ,  General/trade ,  Undergraduate ,  Postgraduate, Research & Scholarly
Format:   Hardback
Publisher's Status:   Out of Stock Indefinitely
Availability:   Out of stock   Availability explained

Table of Contents

Preface. Preface to the First Edition. Introduction. DIODES I: RECTIFIERS. p-n Junction Diode. p-i-n Diode. Schottky-Barrier Diode. Planar-Doped-Barrier (PDB) Diode. Isotype Heterojunction. DIODES II: NEGATIVE RESISTANCE N-SHAPED. Tunnel Diode. Transferred-Electron Device (TED). Resonant-Tunneling Diode. Resonant-Interband-Tunneling (RIT) Diode. Single-Barrier Tunnel Diode. Single-Barrier Tunnel Diode. Single-Barrier Interband-Tunneling Diode. Real-Space-Transfer (RST) Diode. DIODES III: NEGATIVE RESISTANCE S-SHAPED. Metal-Insulator-Semiconductor Switch (MISS). Planar-Doped-Barrier (PDB) Switch. Amorphous Threshold Switch. Heterostructure Hot-Electron Diode (HHED). DIODES IV: NEGATIVE RESISTANCE TRANSIT-TIME. Impact-Ionization-Avalanche Transit-Time (IMPATT) Diode. Barrier-Injection Transit-Time (BARITT) Diode. RESISTIVE AND CAPACITIVE DEVICES. Resistor. Metal-Oxide-Semiconductor (MOS) Capacitor. Charge-Coupled Device (CCD). TRANSISTORS I: FIELD-EFFECT. Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). Junction Field-Effect Transistor (JFET). Metal-Semiconductor Field-Effect Transistor (MESFET). Modulation-Doped Field-Effect Transistor (MODFET). Permeable-Base Transistor. Static-Induction Transistor (SIT). Real-Space-Transfer (RST) Transistor. Planar-Doped Field-Effect Transistor. Surface-Tunnel Transistor. Lateral Resonant-Tunneling Field-Effect Transistor (LRTFET). Stark-Effect Transistor. Velocity-Modulation Transistor (VMT). TRANSISTOR II: POTENTIAL-EFFECT. Bipolar Transistor. Tunneling Hot-Electron-Transfer Amplifier (THETA). Metal-Base Transistor. Bipolar Inversion-Channel Field-Effect Transistor (BICFET). Tunnel-Emitter Transistor (TETRAN). Planar-Doped-Barrier (PDB) Transistor. Heterojunction Hot-Electron Transistor (HHET). Induced-Base Transistor. Resonant-Tunneling Bipolar Transistor (RTBT/RBT). Resonant-Tunneling Hot-Electron Transistor (RHET). Quantum-Well-Base Resonant-Tunneling Transistor (QWBRTT). Spin-Valve Transistor. NONVOLATILE MEMORIES. Floating-Gate Avalanche-Injection Metal-Oxide-Semiconductor (FAMOS) Transistor. Metal-Nitride-Oxide-Semiconductor (MNOS) Transistor. THYRISTORS AND POWER DEVICES. Silicon-Controlled Rectifier (SCR). Insulated-Gate Bipolar Transistor (IGBT). Static-Induction Thyristor (SIThy). Unijunction Transistor. PHOTONICS I: LIGHT SOURCES. Light-Emitting Diode (LED). Injection Laser. PHOTONICS II: PHOTODETECTORS. Photoconductor. p-i-n Photodiode. Schottky-Barrier Photodiode. Charge-Coupled Image Sensor (CCIS). Avalanche Photodiode (APD). Phototransistor. Metal-Smiconductor-Metal (MSM) Photodetector. Quantum-Well Infrared Photodetector (QWIP). Quantum-Dot Infrared Photodetector (QDIP). Blocked-Impurity-Band (BIB) Photodetector. Negative-Electron-Affinity (NEA) Photocathode. Photon-Drag Detector. PHOTONICS III: BISTABLE OPTICAL DEVICES. Self-Electrooptic-Effect Device (SEED). Bistable Etalon. PHOTONICS IV: OTHER DEVICES. Solar Cell. Electroabsorption Modulator. Thermistor. Hall Plate. Strain Gauge (Gage). Interdigital Transducer (IDT). Ion-Sensitive Field-Effect Transistor (ISFET). Appendix A: Selected Nonsemiconductor Devices. Appendix B: Physical Phenomena. Appendix C: General Applications of Device Groups. Appendix D: Physical Properties. Appendix E: Background Information. Index.

Reviews

...I feel that I'm performing a public service for readers by recommending The Complete Guide to Semiconductor Devices, Second Edition...covers just about anything you'd care to know about semiconductors... This new edition...is a testament to the endurance of the earlier work. (Chip Scale, March 2003) ...this book...is an impressive achievement...I would recommend its addition to any university library's science or engineering reference collection. (E--Streams, Vol. 6, No. 5, May 2003) ...a useful text and one that should be available in a well--stocked library... (ChemPhysChem, Vol 4(8), 2003)


"""...I feel that I?m performing a public service for readers by recommending The Complete Guide to Semiconductor Devices, Second Edition...covers just about anything you?d care to know about semiconductors.... This new edition...is a testament to the endurance of the earlier work."" (Chip Scale, March 2003) ""...this book...is an impressive achievement...I would recommend its addition to any university library?s science or engineering reference collection."" (E-Streams, Vol. 6, No. 5, May 2003) ""...a useful text and one that should be available in a well-stocked library..."" (ChemPhysChem, Vol 4(8), 2003)"


...I feel that I'm performing a public service for readers by recommending The Complete Guide to Semiconductor Devices, Second Edition...covers just about anything you'd care to know about semiconductors... This new edition...is a testament to the endurance of the earlier work. (Chip Scale, March 2003) ...this book...is an impressive achievement...I would recommend its addition to any university library's science or engineering reference collection. (E Streams, Vol. 6, No. 5, May 2003) ...a useful text and one that should be available in a well stocked library... (ChemPhysChem, Vol 4(8), 2003)


...I feel that I?m performing a public service for readers by recommending The Complete Guide to Semiconductor Devices, Second Edition...covers just about anything you?d care to know about semiconductors.... This new edition...is a testament to the endurance of the earlier work. (Chip Scale, March 2003) ...this book...is an impressive achievement...I would recommend its addition to any university library?s science or engineering reference collection. (E-Streams, Vol. 6, No. 5, May 2003) ...a useful text and one that should be available in a well-stocked library... (ChemPhysChem, Vol 4(8), 2003) ...I feel that I'm performing a public service for readers by recommending 'The Complete Guide to Semiconductor Devices (Second Edition), by Dr. K.K. Ng. Dr. Ng earned his Ph.D in electrical engineering from Columbia University. Since 1980, he's been a technical manager with Agere Systems (formerly Bell Labs), in Murray Hill, N.J. (The book is published by Wiley Interscience [wiley.com], and is available wherever books of this ilk are sold). The author is no slouch when it comes to technical publishing either. He's been editor of IEEE Electron Device Letters and is a liaison ot the IEEE Press, so it's a pretty good bet he knows what he's talking about. Now, I don't know Dr. Ng personally, nor do I get any money for mentioning this book or any other. (I did get the book free to review, though!) I suspect that Dr. Ng covers just about anything you'd care to know about semiconductors within its 700+ pages. This new edition, which follows the first by eight years, is a testament to the endurance of the earlier work. --Ron Iscoff, Editor, Chip Scale Review Online


Author Information

KWOK K. NG received his PhD from Columbia University in 1979 and his BS degree from Rutgers University in 1975, both in electrical engineering. Since 1980, he has been a Technical Manager with Agere Systems (formerly Bell Laboratories of AT&T and then of Lucent Technologies) at the Murray Hill location in New Jersey. His activities include Si MOS devices, SiGe heterojunction bipolar transistors, and recently compound-semiconductor high-speed and high-power devices. Dr. Ng has held positions as editor of IEEE Electron Device Letters and as liaison to IEEE Press.

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