Free Delivery Over $100
|
|
|||
|
||||
OverviewThis book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime. Full Product DetailsAuthor: Tibor GrasserPublisher: Springer-Verlag New York Inc. Imprint: Springer-Verlag New York Inc. Edition: 2014 ed. Dimensions: Width: 15.50cm , Height: 4.10cm , Length: 23.50cm Weight: 1.776kg ISBN: 9781461479086ISBN 10: 1461479088 Pages: 810 Publication Date: 23 October 2013 Audience: Professional and scholarly , Professional & Vocational Format: Hardback Publisher's Status: Active Availability: In Print  This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us. Table of ContentsIntroduction.- Characterization, Experimental Challenges.- Advanced Characterization.- Characterization of Nanoscale Devices.- Statistical Properties/Variability.- Theoretical Understanding.- Possible Defects: Experimental.- Possible Defects: First Principles.- Modeling.- Technological Impact.- Silicon dioxides/SiON.- High-k oxides.- Alternative technologies.- Circuits.ReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |
||||
