Overview

This book provides a detailed study of the Atomic Layer Epitaxy technique (ALE), its development, current and potential applications. The rapid development of coating technologies over the last 25 years has been instrumental in generating interest and expertise in thin films of materials, and indeed the market for thin film coatings is currently £3 billion with projected annual growth of 20 to 30% [1]. ALE is typical of thin-film processes in that problems in the processing or preparation of good quality epitaxial films have been overcome, resulting in better performance, novel applications of previously unsuitable materials, and the development of new devices. Many materials exhibit interesting and novel properties when prepared as thin films and doped. Vapour-deposited coatings and films are used extensively in the semiconductor and related industries for making single devices, integrated circuits, microwave hybrid integrated circuits, compact discs, solar reflective glazing, fibre optics, photo voltaic cells, sensors, displays, and many other products in general, everyday use. The ALE technique was developed by a research team led by Tuomo Suntola, working for Instrumentarium Oy in Finland. The key members of this team were lorma Antson, Arto Pakkala and Sven Lindfors. In 1977, the research team moved from Instrumentarium to Lohja Corporation, where they continued the development of ALE and were granted a patent in the same year. By 1980, the technique was sufficiently advanced that they were producing flat-screen electroluminescent displays based on a manganese-doped zinc sulphide layer.

Full Product Details

Author:   T. Suntola ,  M. Simpson
Publisher:   Springer
Imprint:   Springer
Edition:   Softcover reprint of the original 1st ed. 1990
Dimensions:   Width: 15.20cm , Height: 1.00cm , Length: 22.90cm
Weight:   0.294kg
ISBN:  

9789401066617

ISBN 10:   9401066612
Pages:   280
Publication Date:   20 September 2011
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   Manufactured on demand  
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Table of Contents

1 Chemical aspects of the Atomic Layer Epitaxy (ALE) process.- 1.1 Introduction.- 1.2 Requirements for ALE growth.- 1.3 Source materials used in ALE.- 1.4 Doping of thin films.- 1.5 Growth of thin films.- 1.6 Concluding remarks and outlook 36.- References.- 2 Theoretical aspects of ALE growth mechanisms.- 2.1 Introduction.- 2.2 Theoretical methods.- 2.3 ALE systems.- 2.4 Conclusions 60.- References.- 3 Comparison of ALE with other techniques.- 3.1 Inroduction.- 3.2 MOVPE.- 3.3 Molecular beam epitaxy.- 3.4 Hybrid areas.- 3.5 Comparison of MOVPE, MBE and ALE.- References.- 4 ALE of III-V compounds HO.- 4.1 Introduction.- 4.2 Self-limiting mechanism.- 4.3 Experimental approaches for ALE of III-V compounds.- 4.4 Review of experimental results.- 4.5 Potential applications of ALE.- 4.6 Conclusion 152.- References.- 5 ALE of II-VI compounds.- 5.1 Introduction.- 5.2 ALE.- 5.3 Reflection high energy electron diffraction (RHEED) observation.- 5.4 Characterisation of ALE-grown Zn chalcogenide layers.- 5.5 Summary 177.- References.

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